Photo-enhanced dissociation of hydrogen-magnesium complexes in gallium nitride

Kamiura, Yoichi; Yamashita, Yoshifumi; Nakamura, S.

doi:10.1016/s0921-4526(99)00405-6

Cited by 10 publications

(5 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[54,55] The same complex has been predicted to form in AlN with an emission energy around 5.1 eV by DFT calculations by Lyons et al [56] This complex is predicted to be electrically neutral when the Fermi level is below 0.4 eV which results in a transition to a positive charge state. [56] These results predicted by Lyons et al seem to be consistent with the findings by Monemar et al who suggested hydrogen passivation in Mg-doped Al x Ga 1Àx N. [57] H passivation has been reported to be mitigated by postgrowth annealing to activate Mg and dissociate H. [58,59] Therefore, the presence of Mg-H complex can also be dependent on postgrowth annealing procedures and therefore the presence of the Mg III peak alone may be favorable. However, this should be analyzed carefully with the context of annealing procedures as the emission energies of Mg III and Mg III -H complex are close together and broad at RT.…”

Section: Mg III and Mg Iii -H Complex In Algansupporting

confidence: 83%

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Kim

Bagheri

Kirste

et al. 2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

A comprehensive energy map as a function of AlGaN composition over the whole alloy range is presented for commonly observed point defects in nominally intrinsic, n-, and p-doped material. The map covers intentional and unintentional impurities (C N , Mg III ), vacancies (V III , V N ), passivating complexes (H), and selfcompensating complexes. The tracking of these defects is crucial to understand their impact on optical and electrical properties as well as for their mitigation.

show abstract

Section: Mg III and Mg Iii -H Complex In Algansupporting

confidence: 83%

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Kim

Bagheri

Kirste

et al. 2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…We exclude the observation of complex related acceptor states as e.g. described by Gelhausen et al, 81 and further authors 15,16,24 as we observe stable emission from all bound excitonic emission lines under UV illumination due to complete activation of the lowly Mg doped (8 × 10 17 cm −3 ) GaN sample. Emission from acceptor complex related bound excitons is not radiation hard under UV illumination and hence leads to an alteration of the PL spectra on a time scale of minutes.…”

Section: Discussionmentioning

confidence: 50%

“…blue and near UV light-emitting diodes 9,10 and blue laser diodes as originally invented by Nakamura et al 11,12 While sufficient n-type conduction for light emitting devices was achieved in the early years of GaN growth, p-type doping with resulting predominant p-type conduction was an outstandingly challenging task until the breakthrough of Amano et al, 8 and Akasaki et al 13 The first p-conducting GaN samples where doped with Mg and subsequently activated by low energy electron beam irradiation (LEEBI) in order to remove the acceptor passivating hydrogen which originates from the metal organic chemical vapor deposition (MOCVD) growth procedure. In the following years most relevant thermal annealing effects in order to remove the hydrogen, 14 as well as photo-enhanced dissociation of Mg-H complexes 15,16 were extensively studied. As a result a better understanding of the transition from highly resistive to well p-conductive GaN:Mg samples with hole concentrations in the mid 10 17 cm −3 regime was achieved.…”

Section: Introductionmentioning

confidence: 99%

Optical signature of Mg-doped GaN: Transfer processes

et al. 2012

View full text Add to dashboard Cite

Mg doping of high quality, metal organic chemical vapor deposition grown GaN films results in distinct traces in their photoluminescence and photoluminescence excitation spectra. We analyze GaN:Mg grown on sapphire substrates and identify two Mg related acceptor states, one additional acceptor state and three donor states which are involved in the donor acceptor pair band transitions situated at 3.26 eV -3.29 eV in GaN:Mg. The presented determination of the donor acceptor pair band excitation channels by photoluminescence excitation spectroscopy in conjunction with temperature dependent photoluminescence measurements results in a direct determination of the donor and acceptor binding, localization, and activation energies which is put into a broader context based on Haynes's rule. Furthermore, we analyze the biexponential decay dynamics of the photoluminescence signal of the acceptor and donor bound excitons. As all observed lifetimes scale with the localization energy of the donor and acceptor related bound excitons, defect and complex bound excitons can be excluded as their origin. Detailed analysis of the exciton transfer processes in the close energetic vicinity of the GaN bandedge reveals excitation via free and bound excitonic channels but also via an excited state as resolved for the deepest localized Mg related acceptor bound exciton. For the two Mg acceptor states we determine binding energies of 164±5 meV and 195±5 meV which is in good agreement with recent density functional theory results. This observation confirms and quantifies the general dual nature of acceptor states in GaN based on the presented analysis of the photoluminescence and photoluminescence excitation spectra.

show abstract

“…Hydrogenated Mg can be activated by annealing at temperatures above ϳ600°C, [286][287][288][289][290] by electron-beam irradiation, 291,292 or even by UV illumination at temperatures above 500°C. 293 In contrast, selfcompensation is a permanent effect and cannot be changed by annealing per se. In GaN:Mg grown by MOCVD, the concentration of free holes at room temperature reaches its maximum value at about 10 18 cm −3 for a Mg concentration of about 3 ϫ 10 19 cm −3 , and it decreases with further increase of Mg concentration ͑Fig.…”

Section: B Luminescence In Mg-doped Ganmentioning

confidence: 99%

Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,827

119

1,666

View full text Add to dashboard Cite

Gallium nitride ͑GaN͒ and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet ͑UV͒ emitters and detectors ͑in photon ranges inaccessible by other semiconductors͒ and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects ͑vacancies, interstitial, and antisites͒, intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

show abstract

Photo-enhanced dissociation of hydrogen-magnesium complexes in gallium nitride

Cited by 10 publications

References 11 publications

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy

Optical signature of Mg-doped GaN: Transfer processes

Luminescence properties of defects in GaN

Contact Info

Product

Resources

About