2015
DOI: 10.1016/j.jcrysgro.2015.05.031
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Photo-etching of GaN: Revealing nano-scale non-homogeneities

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Cited by 14 publications
(16 citation statements)
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“…As it will be shown by TEM later much shorter protruding etching features were also observed between these long whiskers in both samples that were not associated with dislocations. This observation is in agreement with recently published results [13], which suggested that the short protruding dislocation-free etch features were related to nanoscale inhomogeneity.…”
Section: Structural and Optical Characterization 21 Galvanic Photo-esupporting
confidence: 94%
See 1 more Smart Citation
“…As it will be shown by TEM later much shorter protruding etching features were also observed between these long whiskers in both samples that were not associated with dislocations. This observation is in agreement with recently published results [13], which suggested that the short protruding dislocation-free etch features were related to nanoscale inhomogeneity.…”
Section: Structural and Optical Characterization 21 Galvanic Photo-esupporting
confidence: 94%
“…The number of whiskers in both samples are comparable, suggesting that the presence of Fe and Mg in Sample B does not appear to influence the formation of these whiskers. This is in agreement with the recent study by Weyher at al [13], which also reported two orders of magnitude higher density of etching whiskers than dislocations. They attributed the formation of shorter whisker to "the non-uniformity in nano-scale distribution of native point defects, such as V Ga , O N and related V Ga -O N complexes".…”
Section: Cross-sectional and Plan-view Tem Studiessupporting
confidence: 94%
“…Weyher and co‐workers observed hexagonal etch pits and reported an interesting correlation with point defects . SEM was applied to Ga‐face samples etched for 5 min in 1 m KOH at 90 °C.…”
Section: Dark Wet‐chemical Etching Of N‐gan In Aqueous Koh Solutionsmentioning
confidence: 99%
“…23,30,32 This will be the main topic in the first part of the paper (Section 3.1). In a previous study by Weyher et al 33 it was shown that, after brief photogalvanic etching, subsequent chemical etching of the Ga-polar surface was possible. This work, further extended to the semipolar and non-polar surfaces, is described in Section 3.3 following a brief comparison of chemical and photogalvanic etching (Section 3.2).…”
Section: Introductionmentioning
confidence: 98%