Abstract. Radiation-induced structural changes in the chalcogenide glasses of (As 2 S 3 ) x (GeS 2 ) 1-x system with x = 0.1, 0.2, 0.4, and 0.6 corresponding to the chemical compositions Ge 28.125 As 6.25 S 65.625 , Ge 23.5 As 11.8 S 64.7 , Ge 15.8 As 21 S 63.2 , and Ge 9.5 As 28.6 S 61.9 , respectively, were studied using the Raman spectroscopy technique in detail. The polarized (VV) and depolarized (VH) Raman spectra were recorded separately for two identical samples in the unirradiated and γ-irradiated states which allowed performing all measurements under the same experimental conditions. The Raman spectra were considered in the regions of high-frequency excitations related with the molecular peak, and low-frequency excitations related with the boson peak. The depolarization ratio spectra for the unirradiated and -irradiated samples were examined, too. The differential Raman spectra in the high-frequency region between unirradiated and -irradiated samples were obtained only in the VH configuration, since no spectral variations in the VV configuration were detected for all the compositions studied. Employing the differential representation (
I) and unirradiated ( R unirrad.
I) samples, it has been found out that the radiation-induced structural changes are significant only for the glass composition with x = 0.4, while these changes are practically absent in the case of the glass compositions with x = 0.1, 0.2, and 0.6. The applied differential procedure allows also to detect the radiation-induced effects in clusters of corner-shared and edge-shared tetrahedral, which was not possible with IR Fast Fourier Transform spectroscopy due to different activity of IR and Raman bands. In addition, it was shown that the controversial companion c A 1 mode at 370 cm -1 to the main 340 cm -1 A 1 symmetric mode of vibrations in cornershared tetrahedra seems to be related mainly to the vibrations of edge-shared tetrahedra. The possible nanoscale structural mechanism to account for these spectral changes has been discussed.