Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules

Nekrasov, Nikita; Kireev, Dmitry; Omerović, Nejra; Emelianov, Aleksei V.; Bobrinetskiy, Ivan

doi:10.3390/nano9121753

Cited by 5 publications

(3 citation statements)

References 45 publications

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“…We used atomic force microscopy (AFM) to characterize the graphene/organic molecules junction. The film of Hex-4T-Hex and PDI-C6 consist of organic crystals forming molecular island-like layer and some aggregates (figure 2d, f) in agreement with the deposition of the ink on the bare graphene 17 . PANI forms uniform film covering mostly UV treated graphene channel (figure 2e).…”

Section: Photoresponse In Graphene/organic Junction Under Laser Irradsupporting

confidence: 74%

“…In order to obtain a controllable process, basic printing parameters, such as waveform, frequency, jetting voltage, and drop spacing, were adjusted. For lowviscous ink (<2 cP), the waveform of pulse supplied on piezoelectric nozzles is the main parameter to control the formation of the stable droplets 17 . To ensure stable conditions during the process and proper layer formation, the substrate and the cartridge worked at room temperature.…”

Section: Inkjet Printingmentioning

confidence: 99%

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Photosensitive junctions based on UV-modified graphene and inkjet-printed organic molecules

Nekrasov¹,

Emelianov²,

Kireev³

et al. 2020

Organic Electronics and Photonics: Fundamentals and Devices II

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In this work, we report a novel method of mask-less doping of graphene channel in field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. Graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic device fabrication and lowering the device cost. The altering of functionalization of graphene was performed through local inkjet printing of semiconducting molecules: N,N′-Dihexyl-3,4,9,10-perylenedicarboximide (PDI-C6), 5,5′′′-Dihexyl-2,2′:5′,2′′:5′′,2′′′-quaterthiophene (HEX-4T-HEX) and polyalanine (PANI). We found the effect of UV treatment on fabrication of graphene/organic junctions because of change in graphene hydrophobic properties. We demonstrated the high resolution (about 50 µm) and accurate printing of organic ink on UV treated chemical vapor deposited (CVD) graphene. The PANI/graphene junction demonstrate more stable photoresponse characteristic for 470 nm diode illumination. The characteristics of PDI/graphene junction demonstrate the saturation for high diode power because of organic crystals degradation. The photoresponse of 1 mA/W was demonstrated for PANI/graphene junction at 0.3 V bias voltage. The developed method opens the way for local functionalization of on-chip array of graphene by inkjet printing of different semiconducting organic molecules for photonics and electronics application.

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Section: Photoresponse In Graphene/organic Junction Under Laser Irradsupporting

confidence: 74%

Section: Inkjet Printingmentioning

confidence: 99%

Photosensitive junctions based on UV-modified graphene and inkjet-printed organic molecules

Nekrasov¹,

Emelianov²,

Kireev³

et al. 2020

Organic Electronics and Photonics: Fundamentals and Devices II

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, Moore's law is nearing its end, as reported by Nature [1]. One of the promising methods to prolong this era is to replace silicon, the most common material used to make chips, with other materials for next-generation electronics [2][3][4]. Owing to their unique nanosheet structure, large surface area, and extraordinary physical and chemical properties, atomically thin two-dimensional (2D) materials have attracted considerable attention since the successful isolation and characterization of graphene in 2004 [5].…”

Section: Introductionmentioning

confidence: 99%

Bandgap prediction of two-dimensional materials using machine learning

Liu

Zhang

et al. 2021

PLoS ONE

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The bandgap of two-dimensional (2D) materials plays an important role in their applications to various devices. For instance, the gapless nature of graphene limits the use of this material to semiconductor device applications, whereas the indirect bandgap of molybdenum disulfide is suitable for electrical and photo-device applications. Therefore, predicting the bandgap rapidly and accurately for a given 2D material structure has great scientific significance in the manufacturing of semiconductor devices. Compared to the extremely high computation cost of conventional first-principles calculations, machine learning (ML) based on statistics may be a promising alternative to predicting bandgaps. Although ML algorithms have been used to predict the properties of materials, they have rarely been used to predict the properties of 2D materials. In this study, we apply four ML algorithms to predict the bandgaps of 2D materials based on the computational 2D materials database (C2DB). Gradient boosted decision trees and random forests are more effective in predicting bandgaps of 2D materials with an R2 >90% and root-mean-square error (RMSE) of ~0.24 eV and 0.27 eV, respectively. By contrast, support vector regression and multi-layer perceptron show that R2 is >70% with RMSE of ~0.41 eV and 0.43 eV, respectively. Finally, when the bandgap calculated without spin-orbit coupling (SOC) is used as a feature, the RMSEs of the four ML models decrease greatly to 0.09 eV, 0.10 eV, 0.17 eV, and 0.12 eV, respectively. The R2 of all the models is >94%. These results show that the properties of 2D materials can be rapidly obtained by ML prediction with high precision.

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Polydiacetylene–Perylenediimide Supercapacitors

et al. 2020

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Organic supercapacitors have attracted interest as promising “green” and efficient components in energy storage applications. A polydiacetylene derivative coupled with reduced graphene oxide was employed, for the first time, to generate an organic pseudocapacitance‐based supercapacitor that exhibited excellent electrochemical properties. Specifically, diacetylene monomers were functionalized with perylenediimide (PDI), spontaneously forming elongated microfibers. Following polymerization through UV irradiation, the PDI–polydiacetylene microfibers were interspersed with reduced graphene oxide (rGO), generating a porous electrode material exhibiting a high surface area and facilitating efficient ion diffusion, both essential preconditions for supercapacitor applications. We show that PDI–polydiacetylene has an important role in enhancing the electrochemical properties as a supercapacitor electrode. Besides stabilizing the microporous electrode organization, the delocalized π electrons in both the PDI residues and conjugated network of the polydiacetylene contributed to a significantly higher capacitance (specific capacitance >600 F g−1 at 1 A g−1 current density), longer discharge time, and high power density. The PDI–polydiacetylene‐rGO electrodes were employed in a functional supercapacitor device.

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Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules

Cited by 5 publications

References 45 publications

Photosensitive junctions based on UV-modified graphene and inkjet-printed organic molecules

Photosensitive junctions based on UV-modified graphene and inkjet-printed organic molecules

Bandgap prediction of two-dimensional materials using machine learning

Polydiacetylene–Perylenediimide Supercapacitors

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