1978
DOI: 10.1016/0038-1098(78)90023-6
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Photo-induced ESR and optical absorption edge shift in amorphous Ge-S films

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1981
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Cited by 33 publications
(3 citation statements)
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“…12, which assumes inter‐molecular disordering 124. This group also performed comprehensive light‐induced ESR (LESR) studies for (Pb)GeS systems 125–127. Similar ESR studies on GeS glasses were performed also by Kumagai et al 128 in Osaka University.…”
Section: After 1980: Flourish and Relaxationmentioning
confidence: 88%
“…12, which assumes inter‐molecular disordering 124. This group also performed comprehensive light‐induced ESR (LESR) studies for (Pb)GeS systems 125–127. Similar ESR studies on GeS glasses were performed also by Kumagai et al 128 in Osaka University.…”
Section: After 1980: Flourish and Relaxationmentioning
confidence: 88%
“…Several models have been proposed to describe the mechanisms involved in the creation of dangling bonds under illumination with energy exceeding the band-gap energy, but this issue is still controversial 51,56 . Moreover, from the illumination of chalcogenide glasses under near-band-gap light (e.g., a Hg lamp), the evidence suggests that the observed band-gap shift is due to an increase in structural intermediate-range disorder (randomness) 48,57,58 . This structural randomness may broaden the resonance frequency band.…”
Section: Discussionmentioning
confidence: 99%
“…6. As a comparison, a band-gap shift of approximately 0.06 eV (dλ 1 ∼10 nm) was observed after illuminating a GeS 2.33 film for 4 h using a 400-W highpressure Hg lamp 48 . One may notice a surprising increase in the absorption in the full spectrum for the irradiated samples compared with that of the pristine samples (see the inset in Figs.…”
Section: High Refractive Index Contrast Allowing Compact Devicesmentioning
confidence: 99%