Photo-induced intersubband absorption in quantum wells

Boucaud, P.; Gao, Ligang; Visocekas, F.; Moussa, Ziad; Lourtioz, J.‐M.; Julien, F. H.; Sagnes, I.; Campidelli, Y.; Badoz, P. A.; Vagos, P.

doi:10.1016/0022-0248(95)00408-4

Cited by 3 publications

(2 citation statements)

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“…The parameters used in our numerical work are adopted as 27,28 : m * =0.067m 0 (m 0 is the free-electron mass), V c = 1.3 eV, 1/Γ ii = 1 ps, 1/Γ ij = 0.14 ps, σ s = 3 × 10 24 m −3 , µ = 4π × 10 −7 H/m, n r = 3.2, d = 5 × 10 −9 m. In Fig. 2, we plot the first-order α (1) , third-order α (3) of the optical absorption and the total optical absorption α total with R 1 = 4.5 nm, R 2 = 6 nm, I = 5 × 10 8 W/m 2 .…”

Section: Resultsmentioning

confidence: 99%

Intersubband Optical Absorption in Cylindrical Quantum Dot Quantum Well

Wang

Guo

Chen

et al. 2009

Int. J. Mod. Phys. B

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The intersubband optical absorption in cylindrical quantum dot quantum well (QDQW) for different sizes of QDQW is theoretically studied. The analytical expression of the absorption coefficient is derived by using the compact density-matrix approach and the iterative method. And the numerical calculations are presented for a typical GaAs/AlGaAs QDQW. The results obtained show that the optical absorption coefficient in the QDQW can be importantly modified by size of shell well. Moreover, they also show that the optical absorption is strongly dependent on the incident optical intensity. Keywords: Optical absorption; quantum dot quantum well; density matrix approach. PACS numbers: 78.20.Ci, 78.67.-n, 42.65.-k * Corresponding author. 3179 Int. J. Mod. Phys. B 2009.23:3179-3186. Downloaded from www.worldscientific.com by UNIVERSITY OF TEXAS AT AUSTIN on 09/17/13. For personal use only.

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Section: Resultsmentioning

confidence: 99%

Intersubband Optical Absorption in Cylindrical Quantum Dot Quantum Well

Wang

Guo

Chen

et al. 2009

Int. J. Mod. Phys. B

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“…Free carrier absorption, polarization selection rules, spectral shape, dependence of photo-induced intersubband absorption on interband optical excitation and infrared modulation at normal incidence are analysed versus quantum well parameters. Details of the experimental set-up can be found in reference [6]. Briefly, the samples are illuminated with an interband optical pumping Ge /Si and 80 Å GaAs/Al Ga As quantum wells measured at 77 K in p-polarization and for a waveguide geometry.…”

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Photoinduced infrared spectroscopy of bound-to-bound and bound-to-continuum transitions in SiGe/Si quantum wells

Boucaud¹,

Wu²,

Moussa³

et al. 1996

Superlattices and Microstructures

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Ge x Si 1−x infrared detectors I. Absorption in multiple quantum well and heterojunction internal photoemission structures

Strong

Misra

Greve

et al. 1997

Journal of Applied Physics

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We report absorption measurements on two types of long-wave infrared detector structures. Both types were grown by ultrahigh vacuum chemical vapor deposition, and were characterized by multiple analytic techniques. In both multiple quantum well (MQW) and heterojunction internal photoemission (HIP) structures, it is found that free-carrier absorption is dominant for normally incident radiation. The measured absorption is fit well by the classical expression for free-carrier absorption, with scattering times of about 10−14 s (MQW) and 5×10−15 s (HIP). The measured absorption is used to evaluate the responsivity that results when all carriers energetically able to surmount the barrier are collected. Based on this analysis, higher responsivity is predicted for HIP detectors, largely because of the greater density of initial states. The responsivity obtained in practice depends upon the photoconductive gain (MQW detectors) or the escape probability (HIP detectors). The escape probability for HIP detectors is measured in Part II.

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Photo-induced intersubband absorption in quantum wells

Cited by 3 publications

References 10 publications

Intersubband Optical Absorption in Cylindrical Quantum Dot Quantum Well

Intersubband Optical Absorption in Cylindrical Quantum Dot Quantum Well

Photoinduced infrared spectroscopy of bound-to-bound and bound-to-continuum transitions in SiGe/Si quantum wells

Ge x Si 1−x infrared detectors I. Absorption in multiple quantum well and heterojunction internal photoemission structures

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