Photo Lithography - Surface Preparation Interactions

Garnier, Philippe

doi:10.4028/www.scientific.net/ssp.219.177

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…Only the silanol bonds promote a good priming reaction. Hence a hydrolysis of the siloxane into silanol bonds increases the trimethylsilyl bonds amount [2,3]. Nonetheless, hydrophilic surfaces must be very dry to make the HMDS react with the material surface, and not with adsorbed water molecules.…”

Section: Resultsmentioning

confidence: 99%

Wet Etchants Penetration through Photoresist during Wet Patterning

Garnier

2018

SSP

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Section: Resultsmentioning

confidence: 99%

Wet Etchants Penetration through Photoresist during Wet Patterning

Garnier

2018

SSP

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“…Metal contaminations raise significantly by altering yield and reliability, forcing many industrials to develop non-destructive processes to ensure lowest metal surface contamination. Today, the wet cleaning approach is still offering one of the most effective ways to reach process specifications and versatility [11,12]. Looking at the solution functionalities, the HF/acid blend on one hand and wetting/chelating agents on the other intend to address conjointly etching and dissolution mechanisms to remove selectively AlF residues and metal ion contaminants.…”

Section: Introductionmentioning

confidence: 99%

Selective Removal of Various Resilient Ionic and Halides-Based Surface Contaminants by Wet Cleaning

Audouin,

Passelande,

Garnier

et al. 2023

SSP

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In this paper, we investigate the use of a wet cleaner developed to dissolve residues left after plasma etching selectively to aluminum in new applications such as the removal of various resilient ionic and halides-based surface contaminants. The compromise between efficiency and selectivity of this fluorinated acid cleaner makes it an interesting chemistry for many cleaning steps during wafer manufacturing. Two new applications were investigated: the selective removal of fluoride-based defects on aluminum pads and surface decontamination of various ionic metals with low substrate consumption. These studies showed very encouraging results in beakers level tests, but also on partly industrial equipment, opening new possibilities for this cleaner. Indeed, “water lily” defects removal seems to be possible with a low aluminum consumption in TechniClean IK73. Decontamination study carried out in static bath and in single wafer tool showed rather similar results, enabling static bath protocol and ionic metals removal to be validated and VPD-ICPMS results, after a short process time in a single wafer tool were very promising with metal levels close to the lower limit of detection of all elements tested.

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“…Since the kill ratio of these incomplete etch defects is close to 1, every occurrence of this defect is equivalent to loss of one individual dies. Therefore, an effective and optimized wet cleans process with very high particle removal efficiency (PRE) is desired during the wet cleans [3]. Complete surface cleaning can be achieved by combining the actions of previously mentioned chemistries, optimizing their flows and physical forces [4,5,6].…”

Section: Introductionmentioning

confidence: 99%

Removal of Bull’s Eye Signature by Optimizing Wet Cleans Recipe

Bhattacharyya

Muralidhar

Conrad

2016

SSP

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As the semiconductor device technology is moving toward increasingly smaller nodes, it is becoming more challenging to keep the wafers free from contamination of even smaller particles. Wet cleaning process takes a major role in keeping the wafers clean, especially in post-RIE cleans. However, as every other process, wet cleaning also contributes some defects as adders which can potentially cause significant yield killer defects. A cluster of defects, classified as incomplete etch, was observed at the center of the wafer with a wet clean recipe (CIP1) since the adders from this recipe were not allowing the etch process and rendering incomplete etch defects. In this work, we optimized this CIP1 recipe to eliminate defects with the bull’s eye signature at the wafer center and widened the process window of this type of wet cleaning process. The new recipe (CIP2) showed 100% success rate while CIP1 recipe had an occurrence of 35% failure for the bull’s eye signature on the similar quality and quantity of wafers.

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Photo Lithography - Surface Preparation Interactions

Abstract: More than one third of process operations consist in surface preparations in the integrated circuits’ manufacturing. Most of them are directly or indirectly linked with photo lithography. This paper deals with these interactions.

Cited by 4 publications

References 8 publications

Wet Etchants Penetration through Photoresist during Wet Patterning

Wet Etchants Penetration through Photoresist during Wet Patterning

Selective Removal of Various Resilient Ionic and Halides-Based Surface Contaminants by Wet Cleaning

Removal of Bull’s Eye Signature by Optimizing Wet Cleans Recipe

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