The objective of this article is to delve into the isotropic three-phase (3PH) lag magneto photo-thermoelastic (PTE) theory in semiconductor medium, with a special emphasis on its memory-dependent-derivative (MDD) characteristics. The equations for displacement, temperature distribution, carrier density, and stress components resulting from this theory are formulated using these characteristics and then transformed into a Fourier-Laplace vector matrix differential equation. This equation is solved using an eigenvalue approach, and the numerical solution is obtained by inverting Fourier and Laplace transforms. Graphical solutions based on the properties of silicon material are visualized using Mathematica software. The results demonstrate the excellence of MDD in this 3PH model by showing the effect of coupling between thermal, plasma, and elastic waves with the presence of time delay parameters and linear kernel function. Additionally, the presence of several kernel functions reveals significant differences in these magneto PTE quantities. This theory will aid in better characterizing materials, optimizing device design, and exploring non-linear and transient phenomena in greater detail. Ultimately, these advancements will push the boundaries of photo-thermal science and its practical applications.