Photoacoustic determination of the absorption spectra in Hg<sub>1-x</sub>Zn<sub>x</sub>Te alloys

El-Akkad, F.A.; Farhan, A. R.

doi:10.1088/0022-3727/28/9/025

Cited by 6 publications

(2 citation statements)

References 18 publications

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“…The absorption coefficients a(E) in the fundamental absorption edge of Zn x Hg 1Àx Te have also been measured by several authors [264][265][266]. SE has been carried out on Zn x Hg 1Àx Te in the range between 0.75 and 5.7 eV by Castaing et al [267].…”

Section: (E) Znhgtementioning

confidence: 99%

Optical Properties

2009

Properties of Semiconductor Alloys

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The complex dielectric function «ðEÞ ¼ « 1 ðEÞ þ i« 2 ðEÞ ð 10:1Þcan be used to describe the optical properties of the medium at all photon energiesThe complex refractive index n Ã (E) can also be given bywhere n(E) is the ordinary (real) refractive index and k(E) is the extinction coefficient. From Equation (10.2), we obtain Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors Sadao Adachi

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Section: (E) Znhgtementioning

confidence: 99%

Optical Properties

2009

Properties of Semiconductor Alloys

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“…[1][2][3][4] Its incorporation as part of hybrid systems such as, for example, HgZnTe, 5 MgZnTe, 6 and CdZnTe 7 widens its range of applications to include infrared detectors, blue LED's, and tandem solar cells, respectively. Moreover, the feasibility of photovoltaic devices using ZnTe homojunctions has recently been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

Akkad

Abdulraheem

2013

Journal of Applied Physics

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We report on a study of the physical properties of ZnTe:Cu films with Cu content up to ∼12 at. % prepared using rf magnetron sputtering. The composition and lateral homogeneities are studied using X-ray photoelectron spectroscopy (XPS). Atomic force microscopy measurements on films deposited at different substrate temperatures (up to 325 °C) yielded activation energy of 12 kJ/mole for the grains growth. The results of XPS and electrical and optical measurements provide evidence for the formation of the ternary zinc copper telluride alloy in films containing Cu concentration above ∼4 at. %. The XPS results suggest that copper is incorporated in the alloy with oxidation state Cu1+ so that the alloy formula can be written Zn1−yCuy Te with y = 2−x, where x is a parameter measuring the stoichiometry in the Cu site. The formation of this alloy causes appreciable shift in the binding energies of the XPS peaks besides an IR shift in the energy band gap. Detailed analysis of the optical absorption data revealed the presence of two additional transitions, besides the band gap one, originating from the Γ8 and Γ7 (spin-orbit) valence bands to a donor level at ∼0.34 eV below the Γ6 conduction band. This interpretation yields a value for the valence band splitting energy Δ ≅ 0.87 eV independent of copper concentration. On the other hand, the mechanism of formation of the alloy is tentatively explained in terms of a point defect reaction in which substitutional Cu defect CuZn is also created. Assuming that substitutional Cu is the dominant acceptor in the Zn rich alloy as in ZnTe, its formation energy was determined to be 1.7 eV close to the theoretical value (1.41 eV) in ZnTe.

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Hg(1-x)Zn(x)Te physical properties

Landolt-Börnstein - Group III Condensed Matter

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Photoacoustic determination of the absorption spectra in Hg_1-xZn_xTe alloys

Abstract: Hg1-ZnxTe alloys were prepared by inter-diffusion between the binary compounds at high temperatures. Photoacoustic spectroscopy is used to determine the optical absorption coefficient in the region of fundamental absorption. The energy bandgap is determined in the composition range 0.40

Cited by 6 publications

References 18 publications

Optical Properties

Optical Properties

Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

Hg(1-x)Zn(x)Te physical properties

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Photoacoustic determination of the absorption spectra in Hg1-xZnxTe alloys

Abstract: Hg1-ZnxTe alloys were prepared by inter-diffusion between the binary compounds at high temperatures. Photoacoustic spectroscopy is used to determine the optical absorption coefficient in the region of fundamental absorption. The energy bandgap is determined in the composition range 0.40

Cited by 6 publications

References 18 publications

Optical Properties

Optical Properties

Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

Hg(1-x)Zn(x)Te physical properties

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Product

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Photoacoustic determination of the absorption spectra in Hg_1-xZn_xTe alloys