2018
DOI: 10.1021/acssensors.8b00146
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Photoactivated Mixed In-Plane and Edge-Enriched p-Type MoS2 Flake-Based NO2 Sensor Working at Room Temperature

Abstract: Toxic gases are produced during the burning of fossil fuels. Room temperature (RT) fast detection of toxic gases is still challenging. Recently, MoS transition metal dichalcogenides have sparked great attention in the research community due to their performance in gas sensing applications. However, MoS based gas sensors still suffer from long response and recovery times, especially at RT. Considering this challenge, here, we report photoactivated highly reversible and fast detection of NO sensors at room tempe… Show more

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Cited by 168 publications
(89 citation statements)
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“…[ 37 ] Therefore, it is quite difficult to grow p‐type MoS 2 directly by CVD; moreover, from a gas‐sensing point of view, it would be interesting to investigate the properties of p‐type MoS 2 because it has been only rarely reported. [ 39 ] Recently, we succeed to synthesize few layers of p‐type MoS 2 by spin coating of a molybdenum acid peroxide sol–gel precursor (including 1% W) followed by sulfurization at 900 °C; more details are shown in our previous article. [ 40 ] The optical and AFM images ( Figure a,b) demonstrate the successful preparation of large‐area continuous films with a thickness of ≈3.5 nm.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…[ 37 ] Therefore, it is quite difficult to grow p‐type MoS 2 directly by CVD; moreover, from a gas‐sensing point of view, it would be interesting to investigate the properties of p‐type MoS 2 because it has been only rarely reported. [ 39 ] Recently, we succeed to synthesize few layers of p‐type MoS 2 by spin coating of a molybdenum acid peroxide sol–gel precursor (including 1% W) followed by sulfurization at 900 °C; more details are shown in our previous article. [ 40 ] The optical and AFM images ( Figure a,b) demonstrate the successful preparation of large‐area continuous films with a thickness of ≈3.5 nm.…”
Section: Resultsmentioning
confidence: 99%
“…The sensing mechanism of pure MoS 2 gas sensor (either n‐type or p‐type) has been well interpreted by the surface reaction with the target gases, which causes the changes in the resistance of the MoS 2 due to the charge transfer between the adsorbate and the support. [ 18,39 ] However, the sensing mechanism of our MoS 2 p–n junction sensor needs to be further studied. When n‐type MoS 2 and p‐type MoS 2 are brought into contact ( Figure a), the electrons are expected to transfer from the n‐type MoS 2 to p‐type MoS 2 , leaving a positive area on the surface of MoS 2 and forming a depletion layer; similarly, the holes near the interface of the p–n junction move from p‐type MoS 2 to n‐type MoS 2 , forming a negative charge area.…”
Section: Resultsmentioning
confidence: 99%
“…Generally, the pyrite‐type transition metal disulfide (FeS 2 ) with abundant S 2 2− ions show fast electrical transport and have employed as promising catalysts for electrocatalytic reactions,78–82 but the lack of basic active sites limited their intrinsic activity 83–88. Besides, metal chalcogenides can also be made into various heterostructures and nanocomposites, which show enhanced catalysis in electrochemical reactions ( Figure ) 96–116…”
Section: Introductionmentioning
confidence: 99%
“…Photodetectors based on few‐layered MoS 2 have exhibited outstanding photodetection properties, such as having a high photogain up to 13.3 and a fast photoresponse time of 70 µs . Recently, Kumar and co‐workers reported an edge‐enriched MoS 2 ‐based photoactivated probe that had a fast photoresponse NO 2 detection . Morpurgo and co‐workers also demonstrated that a monolayer of MoS 2 exhibited a maximum conductivity with suitable sulfur vacancies that was favorable for photogenerated hole‐trapping .…”
Section: Introductionmentioning
confidence: 99%