Photocatalytic Activity and Electron Field Emission of Necked ZnO:Bi Nanowires

Abstract

Bismuth-doped ZnO nanowires were synthesized by a vapor transfer process at 600 degrees C. Raman spectra revealed that a slight blueshift occurred in ZnO:Bi (438 cm(-1)) nanowires in contrast to ZnO (436 cm(-1)) nanowires. The X-ray photoelectron spectrum showed that the ZnO: Bi nanowires contained the Bi dopant as Bi(0) and Bi(3+). The turn-on fields of the ZnO: Bi and ZnO nanowires were similar to 4.19 and 6.57 V/mu m, respectively. Because the ZnO:Bi nanowires exhibited a redshift of absorbance spectrum with a high ratio in the UV range, the photocatalytic activities of ZnO: Bi nanowires were considered superior to those of ZnO nanowires. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3387638] All rights reserved

Photoresponsive and Ultraviolet to Visible-Light Range Photocatalytic Properties of ZnO:Sb Nanowires

“…In addition, doping with Sb 5+ ͑and Sb 3+ ͒ resulted in a redshift effect, which can be attributed to the charge-transfer transitions between Sb 5+ ͑and Sb 3+ ͒ electrons and the ZnO conduction band. 4 The presence of electron occupied intraband gap levels in ZnO:Sb photocatalysts may be responsible for the visible-light absorption. 18 A decreasing bandgap ͑or introduction of intraband gap states͒ results in more visible-light absorption.…”

“…Zinc oxide ͑ZnO͒ nanostructures have been considered promising materials for electronic and photonic applications due to their large excitation binding energy of 60 meV with wide direct bandgap at 3.37 eV. 1 ZnO nanostructures have been doped with appropriate amounts of dopant ͑i.e., Bi, Al, In, and Sn͒, [2][3][4] which can modulate the electrical properties 5,6 for use as alternative transparent conducting oxides. For optoelectronic device applications, n-type ZnO nanowires have been widely investigated using ZnO doped by dopant impurity as mentioned above.…”

Controlled CVD growth of Cu–Sb alloy nanostructures

“…For example, Sb has a relatively low vaporization temperature of ∼773 K. It is normally easy to grow samples of Sb alloyed with elements that have vaporization temperatures in the same range, e.g. In [17], Bi [23], Te [4,24], etc. The process will be much more difficult for growing samples of Sb alloyed with elements that have high vaporization temperatures, e.g.…”

“…Bi [23], Te [4,24], etc. The process will be much more difficult for growing samples of Sb alloyed with elements that have high vaporization temperatures, e.g.…”