Conductive atomic
force microscopy (C-AFM) was employed to perform
conductivity measurements on a facet-specific Cu2O cube,
octahedron, and rhombic dodecahedron and intrinsic Si {100}, {111},
and {110} wafers. Similar I–V curves to those
recorded previously using a nanomanipulator were obtained with the
exception of high conductivity for the Si {110} wafer. Next, I–V curves of different Cu2O–Si
heterostructures were evaluated. Among the nine possible arrangements,
Cu2O octahedron/Si {100} wafer and Cu2O octahedron/Si
{110} wafer combinations show good current rectification behaviors.
Under white light illumination, Cu2O cube/Si {110} wafer
and Cu2O rhombic dodecahedron/Si {111} wafer combinations
exhibit the largest degrees of photocurrent, so such interfacial plane-controlled
semiconductor heterojunctions with light sensitivity can be applied
to make photodetectors. Adjusted band diagrams are presented highlighting
different interfacial band bending situations to facilitate or inhibit
current flow for different Cu2O–Si junctions. More
importantly, the observation of clear current-rectifying effects produced
at the semiconductor heterojunctions with properly selected contacting
faces or planes implies that novel field-effect transistors (FETs)
can be fabricated using this design strategy, which should integrate
well with current chip manufacturing processes.