Photocatalytic TiO2 thin-films deposited by a pulsed laser deposition technique

Terashima, Masuo; Inoue, Narumi; Kashiwabara, Shigeru; Fujimoto, Ryozo

doi:10.1016/s0169-4332(00)00715-7

Cited by 43 publications

(18 citation statements)

References 6 publications

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“…[8] TiO 2 nanostructured thin films are also used as various optical coatings for its good transmittance in the visible region, high refractive index and chemical stability. [9,10] In the last two decades, several experimental methods, such as chemical vapor deposition, [11] pulsed laser deposition, [12] sputtering [13] and sol-gel technique, were used for preparation of the TiO 2 nanostructured films. [14][15][16] In comparison with other methods, the sol-gel technique has some advantages such as controllability, reliability and reproducibility.…”

Section: Introductionmentioning

confidence: 99%

Study on growth rate of TiO₂ nanostructured thin films: simulation by molecular dynamics approach and modeling by artificial neural network

Bahramian

2013

Surface & Interface Analysis

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Effects of the deposition process parameters on the thickness of TiO 2 nanostructured film were simulated using the molecular dynamics (MD) approach and modeled by the artificial neural network (ANN) and regression method. Accordingly, TiO 2 nanostructured film was prepared experimentally with the sol-gel dip-coating method. Structural instabilities can be expected, due to short-and/or long-range intermolecular forces, leading to the surface inhomogeneities. In the MD simulation, the Morse potential function was used for the inter-atomic interactions, and equations of motion for atoms were solved by Verlet algorithm. The effect of the withdrawal velocity, drying temperature and number of deposited layers were studied in order to characterize the film thickness. The results of MD simulations are reasonably consistent with atomic force microscopy, scanning electron microscopy and Dektak surface profiler. Finally, the outputs from experimental data were analyzed by using the ANN in order to investigate the effects of deposition process parameters on the film thickness. In this case, various architectures have been checked using 75% of experimental data for training of the ANN. Among the various architectures, feed-forward back-propagation network with trainer training algorithm was found as the best architecture. Based on the R-squared value, the ANN is better than the regression model in predicting the film thickness. The statistical analysis for those results was then used to verify the fitness of the complex process model. Based on the results, this modeling methodology can explain the characteristics of the TiO 2 nanostructured thin film and growth mechanism varying with process conditions.

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Section: Introductionmentioning

confidence: 99%

Study on growth rate of TiO₂ nanostructured thin films: simulation by molecular dynamics approach and modeling by artificial neural network

Bahramian

2013

Surface & Interface Analysis

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“…In addition to this, it also found diverse field of applications in photo catalysis, dye‐sensitized solar cells, gas sensors, antireflective coatings and multicolour photo chromic coatings, resistive switching and bacterial activities . Various techniques employed for preparation of the TiO 2 films are sol–gel deposition, spray pyrolysis, pulsed laser deposition, electron beam evaporation, chemical vapour deposition and magnetron sputtering . Among these methods, magnetron sputtering has the advantages of good adhesion, high density and homogeneity of films on large area substrates.…”

Section: Introductionmentioning

confidence: 99%

Substrate temperature influenced physical properties of silicon MOS devices with TiO₂ gate dielectric

Sekhar

Kondaiah

Chandra

et al. 2012

Surface & Interface Analysis

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DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO 2 ) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6Â10 À2 Pa and at different substrate temperatures in the range 303 -673 K. The films formed at 303 K were X-ray amorphous whereas those deposited at substrate temperatures ≥ 473 K were transformed into polycrystalline nature with anatase phase of TiO 2 . Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO 2 . The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO 2 /p-Si sandwich structure was fabricated and performed current-voltage and capacitance-voltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8 Â 10 À6 to 5.4 Â 10 À8 A/cm 2 with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler-Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K.

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“…TiO 2 films were often prepared by using either sol-gel method [19][20][21][22][23][24][25], pray pyrolysis [26] or sputtering [27]. Pulsed laser deposition (PLD) method became a widely used technique during the past few years due to the advantages of a simple system set-up, a wide range of deposition conditions, wide choice of materials and high instantaneous deposition rates [28][29][30][31]. However, the drawback of PLD was the necessity of gas/vacuum equipment, which made the process difficult [32,33].…”

Section: Introductionmentioning

confidence: 99%

Photoelectrocatalytic degradation of rhodamine B using Ti/TiO2 electrode prepared by laser calcination method

Zheng

et al. 2006

Electrochimica Acta

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Photocatalytic TiO2 thin-films deposited by a pulsed laser deposition technique

Cited by 43 publications

References 6 publications

Study on growth rate of TiO₂ nanostructured thin films: simulation by molecular dynamics approach and modeling by artificial neural network

Study on growth rate of TiO₂ nanostructured thin films: simulation by molecular dynamics approach and modeling by artificial neural network

Substrate temperature influenced physical properties of silicon MOS devices with TiO₂ gate dielectric

Photoelectrocatalytic degradation of rhodamine B using Ti/TiO2 electrode prepared by laser calcination method

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Photocatalytic TiO2 thin-films deposited by a pulsed laser deposition technique

Cited by 43 publications

References 6 publications

Study on growth rate of TiO2 nanostructured thin films: simulation by molecular dynamics approach and modeling by artificial neural network

Study on growth rate of TiO2 nanostructured thin films: simulation by molecular dynamics approach and modeling by artificial neural network

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

Photoelectrocatalytic degradation of rhodamine B using Ti/TiO2 electrode prepared by laser calcination method

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Study on growth rate of TiO₂ nanostructured thin films: simulation by molecular dynamics approach and modeling by artificial neural network

Study on growth rate of TiO₂ nanostructured thin films: simulation by molecular dynamics approach and modeling by artificial neural network

Substrate temperature influenced physical properties of silicon MOS devices with TiO₂ gate dielectric