Photocatalytic water splitting on the CuInS2 photoelectrodes: Effects of co-electrodeposition mechanisms on the photoelectrochemical properties

Boosting charge transport in the BiVO4 photoanode interface modified with an aluminum hydroxide layer for solar water oxidation

“…2–6 In particular, the development of visible light responsive photoelectrodes that cause H 2 generation by the photo-reduction of water on p-type semiconductor photoelectrodes and O 2 generation by photo-oxidation on n-type semiconductor photoelectrodes is essential. Visible-light and/or near-infrared sensitive p-type semiconductors that have been extensively investigated are Cu 2 O, 7 CuO, 8 CuInS 2 (CIS), 9–13 Cu 2 SnS 3 (CTS) 14–16 and Cu 2 ZnSnS 4 (CZTS). 17–22…”

“…[2][3][4][5][6] In particular, the development of visible light responsive photoelectrodes that cause H 2 generation by the photo-reduction of water on p-type semiconductor photoelectrodes and O 2 generation by photo-oxidation on n-type semiconductor photoelectrodes is essential. Visible-light and/or near-infrared sensitive p-type semiconductors that have been extensively investigated are Cu 2 O, 7 CuO, 8 CuInS 2 (CIS), [9][10][11][12][13] Cu 2 SnS 3 (CTS) [14][15][16] and Cu 2 ZnSnS 4 (CZTS). [17][18][19][20][21][22] The development of n-type semiconductors such as WO 3 , Fe 2 O 3 and BiVO 4 photoelectrodes that respond efficiently to visible light is especially important to achieve complete water splitting to produce O 2 .…”