Photochemical fabrication of defect-abundant Pd/SnO<sub>2</sub> with promoted performance for dioctyl phthalate gas sensing

Fu, Yue; Li, Chaozhong; Chen, Xue; Liu, Yidan; Wu, Huayue; Jia, Rongrong; Shi, Liyi; Huang, Lei

doi:10.1039/d3nj00578j

Cited by 5 publications

(1 citation statement)

References 53 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Standard gases of CO and NH 3 were purchased from Shanghai Weichuang Standard Gas Analysis Technology Co., Ltd. (Shanghai, China). Ethanol, methanol, and formaldehyde gases were generated using a self-made gas generation device [46] (Figure S12). The device had a heating element at its edge, which allowed for the slow addition of the liquid to be vaporized using a micropipette.…”

Section: Gas Sensitivity Performance Testmentioning

confidence: 99%

In Situ-Derived N-Doped ZnO from ZIF-8 for Enhanced Ethanol Sensing in ZnO/MEMS Devices

Liang,

Yan,

Yang

et al. 2024

Molecules

Self Cite

View full text Add to dashboard Cite

Microelectromechanical systems (MEMS) gas sensors have numerous advantages such as compact size, low power consumption, ease of integration, etc., while encountering challenges in sensitivity and high resistance because of their low sintering temperature. This work utilizes the in situ growth of Zeolitic Imidazolate Framework-8 (ZIF-8) followed by its conversion to N-doped ZnO. The results obtained from scanning electron microscopy (SEM) and transmission electron microscopy (TEM) indicate that the in situ derivation of ZIF-8 facilitates the adhesion of ZnO particles, forming an island-like structure and significantly reducing the interfaces between these particles. Furthermore, powder X-ray diffraction (XRD) analysis, elemental mapping, and X-ray photoelectron spectroscopy (XPS) analysis confirm the conversion of ZIF-8 to ZnO, the successful incorporation of N atoms into the ZnO lattice, and the creation of more oxygen vacancies. The ZIF-8-derived N-doped ZnO/MEMS sensor (ZIF (3)-ZnO/MEMS) exhibits remarkable gas sensitivity for ethanol detection. At an operating temperature of 290 °C, it delivers a substantial response value of 80 towards 25 ppm ethanol, a 13-fold enhancement compared with pristine ZnO/MEMS sensors. The sensor also exhibits an ultra-low theoretical detection limit of 11.5 ppb to ethanol, showcasing its excellent selectivity. The enhanced performance is attributed to the incorporation of N-doped ZnO, which generates abundant oxygen vacancies on the sensor’s surface, leading to enhanced interaction with ethanol molecules. Additionally, a substantial two-order-of-magnitude decrease in the resistance of the gas-sensitive film is observed. Overall, this study provides valuable insights into the design and fabrication strategies applicable to high-performance MEMS gas sensors in a broader range of gas sensing.

show abstract

Section: Gas Sensitivity Performance Testmentioning

confidence: 99%

In Situ-Derived N-Doped ZnO from ZIF-8 for Enhanced Ethanol Sensing in ZnO/MEMS Devices

Liang,

Yan,

Yang

et al. 2024

Molecules

Self Cite

View full text Add to dashboard Cite

show abstract

SnO₂/Au Microelectromechanical Systems Modified by Oxygen Vacancies for Enhanced Sensing of Dioctyl Phthalate

Chen,

Wang,

et al. 2024

ChemPlusChem

View full text Add to dashboard Cite

Dioctyl phthalate (DOP) serves as a characteristic gas utilized in early electrical fire detection, its detection offers promising prospects for the prevention of electrical fires. In this study, we employed a modified photodeposition method to prepare Tin dioxide (SnO2) materials co‐modified with Au and oxygen vacancies. Subsequently, microelectromechanical systems (MEMS) gas sensor for DOP detection were fabricated, utilizing 0.5 %Au/SnO2‐I as the sensing material. Characterization results reveal the presence of abundant oxygen vacancies in 0.5 %Au/SnO2‐I. The synergistic interplay of Au and oxygen vacancies resulted in a remarkable response of 9.98 to 20 ppm of DOP at operational temperature of 250 °C. This represents a significant 96 % enhancement in comparison to the response value of 4.50 exhibited by pure SnO2 at 300 °C. Notably, this gas sensor boasts low power consumption and demonstrates a quick response in the detection of overheating polyvinyl chloride (PVC) cables under simulated conditions.

show abstract

Enhancing photo-response performance through ultrathin Al2O3 modification at the p-SnO2:Al/n-GaN heterojunction interface

Shi,

Deng,

Jiang

et al. 2024

Optical Materials

View full text Add to dashboard Cite

Photochemical fabrication of defect-abundant Pd/SnO₂ with promoted performance for dioctyl phthalate gas sensing

Abstract: The developing of a fast and selective response gas sensor for dioctyl phthalate (DOP) has been attracting close attention for early warning of electrical fires. In this work, photodeposition was...

Cited by 5 publications

References 53 publications

In Situ-Derived N-Doped ZnO from ZIF-8 for Enhanced Ethanol Sensing in ZnO/MEMS Devices

In Situ-Derived N-Doped ZnO from ZIF-8 for Enhanced Ethanol Sensing in ZnO/MEMS Devices

SnO₂/Au Microelectromechanical Systems Modified by Oxygen Vacancies for Enhanced Sensing of Dioctyl Phthalate

Enhancing photo-response performance through ultrathin Al2O3 modification at the p-SnO2:Al/n-GaN heterojunction interface

Contact Info

Product

Resources

About

Photochemical fabrication of defect-abundant Pd/SnO2 with promoted performance for dioctyl phthalate gas sensing

Abstract: The developing of a fast and selective response gas sensor for dioctyl phthalate (DOP) has been attracting close attention for early warning of electrical fires. In this work, photodeposition was...

Cited by 5 publications

References 53 publications

In Situ-Derived N-Doped ZnO from ZIF-8 for Enhanced Ethanol Sensing in ZnO/MEMS Devices

In Situ-Derived N-Doped ZnO from ZIF-8 for Enhanced Ethanol Sensing in ZnO/MEMS Devices

SnO2/Au Microelectromechanical Systems Modified by Oxygen Vacancies for Enhanced Sensing of Dioctyl Phthalate

Enhancing photo-response performance through ultrathin Al2O3 modification at the p-SnO2:Al/n-GaN heterojunction interface

Contact Info

Product

Resources

About

Photochemical fabrication of defect-abundant Pd/SnO₂ with promoted performance for dioctyl phthalate gas sensing

SnO₂/Au Microelectromechanical Systems Modified by Oxygen Vacancies for Enhanced Sensing of Dioctyl Phthalate