Photochemistry of tetrasulphonated zinc phthalocyanine in water and DMSO solutions by absorption, emission, Raman spectroscopy and femtosecond transient absorption spectroscopy

Brożek-Płuska, Beata; Jarota, Arkadiusz; Kurczewski, K.; Abramczyk, Halina

doi:10.1016/j.molstruc.2008.10.060

Cited by 32 publications

(30 citation statements)

References 30 publications

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“…Due to these exceptional properties, thin films of MPcs have been recently intensively investigated using the optical methods such as absorption ellipsometry, FTIR absorption, Raman spectroscopy, X-ray diffraction, scanning electron microscopy, and atomic force microscopy [11][12][13][14][15][16]. The preferred orientation is usually determined by sample preparation conditions such as the type of substrate (amorphous or single crystalline), type of deposited layer (different organic materials), temperature of substrate, deposition rate, quality of the substrate surface, and method of deposition.…”

Section: Introductionmentioning

confidence: 99%

The molecular structure ordering and orientation of the metallophthalocyanine CoPc, ZnPc, CuPc, and MgPc thin layers deposited on silicon substrate, as studied by micro-Raman spectroscopy

et al. 2011

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In this article, we present orientation study of metallophthalocyanine (MPcs) (CoPc, ZnPc, CuPc, and MgPc) thin films deposited on silicon substrate. The MPc's thin layers were obtained by the quasi-molecular beam evaporation. The micro-Raman scattering spectra of MPc's thin films were investigated in the spectral range 550-1650 cm -1 using 488 nm excitation wavelength. Raman scattering studies were performed at room temperature before and after annealing process. Annealing process of thin layers was carried out at 200°C for 6 h. From polarized Raman spectra using surface Raman mapping, the information on polymorphic phase of MPc's layers has been obtained. The chosen Raman modes A 1g and B 1g are connected with different polymorphic phases of MPc (a and b form) thin layers. Moreover, the obtained results showed the influence of the annealing process on the ordering of the molecular structure. Following the annealing process, it was observed arrangement of the thin layers structure being revealed in Raman spectra. The obtained results indicate that the annealing process has a significant influence on the structure of thin layers being under study.

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Section: Introductionmentioning

confidence: 99%

The molecular structure ordering and orientation of the metallophthalocyanine CoPc, ZnPc, CuPc, and MgPc thin layers deposited on silicon substrate, as studied by micro-Raman spectroscopy

et al. 2011

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“…Recently, they have been intensively investigated using the optical methods such as absorption ellipsometry, FTIR absorption, Raman spectroscopy, X-ray diffraction (XRD), scanning tunneling microscopy (STM), and atomic force microscopy (AFM) [9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Orientation study of iron phthalocyanine (FePc) thin films deposited on silicon substrate investigated by atomic force microscopy and micro-Raman spectroscopy

Szybowicz

Makowiecki

2011

J Mater Sci

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In this article, we present temperature and orientation study of iron phthalocyanine (FePc) thin films with different thickness deposited on silicon substrate. The organic thin films were obtained by the quasi-molecular beam evaporation. The micro-Raman scattering spectra of FePc thin layers were investigated in the spectral range 550-1,800 cm -1 using 488-nm excitation wavelength. The Raman scattering and atomic force microscopy studies were performed at room temperature before and after annealing process. Annealing process of thin layers was carried out at 453 K for 6 h. From polarized Raman spectra using surface Raman mapping procedure the information on distribution of polymorphic phases of FePc layers has been carried out. Moreover, the obtained results showed the influence of the annealing process on the ordering of the molecular structure of thin films deposited on silicon substrate. For the very thin layers we did not observe the change of the polymorphic phase but only reordering of the thin layers and change of molecular structure to intermediate phase. Using atomic force microscopy method, we observed arrangement of the thin layers structure connected with the change of roughness of the thin layers after annealing process. The obtained results indicate that the structure of thin layer deposited on silicon substrate is strongly affected by the annealing process.

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“…Due to these exceptional properties, thin films of metallophthalocyanine have been recently intensively investigated especially by the optical methods such as absorption, ellipsometry, harmonic generation and Raman spectroscopy [6][7][8][9][10][11]. The Raman spectroscopy can be a useful tool to study various intra-and intermolecular energy transfer processes.…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

Skonieczny

Popielarski

Bała

et al. 2016

Materials Science-Poland

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The cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm −1 to 1900 cm −1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

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Photochemistry of tetrasulphonated zinc phthalocyanine in water and DMSO solutions by absorption, emission, Raman spectroscopy and femtosecond transient absorption spectroscopy

Cited by 32 publications

References 30 publications

The molecular structure ordering and orientation of the metallophthalocyanine CoPc, ZnPc, CuPc, and MgPc thin layers deposited on silicon substrate, as studied by micro-Raman spectroscopy

The molecular structure ordering and orientation of the metallophthalocyanine CoPc, ZnPc, CuPc, and MgPc thin layers deposited on silicon substrate, as studied by micro-Raman spectroscopy

Orientation study of iron phthalocyanine (FePc) thin films deposited on silicon substrate investigated by atomic force microscopy and micro-Raman spectroscopy

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

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