2015
DOI: 10.1016/j.polymer.2015.05.055
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Photocleavable epoxy based materials

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Cited by 21 publications
(20 citation statements)
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References 49 publications
(37 reference statements)
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“…(2‐Nitro‐1,4‐phenylene) bis(methylene) bis(2‐(oxiran‐2‐yl)acetate) (epoxy‐ NBE ) as photosensitive monomer was synthesized as previously reported in ref. . Succinic anhydride terminated polydimethylsiloxane with a molecular mass of 600–800 g mol −1 and a viscosity of 75–100 cSt was supplied by abcr (Karlsruhe, Germany).…”
Section: Methodsmentioning
confidence: 99%
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“…(2‐Nitro‐1,4‐phenylene) bis(methylene) bis(2‐(oxiran‐2‐yl)acetate) (epoxy‐ NBE ) as photosensitive monomer was synthesized as previously reported in ref. . Succinic anhydride terminated polydimethylsiloxane with a molecular mass of 600–800 g mol −1 and a viscosity of 75–100 cSt was supplied by abcr (Karlsruhe, Germany).…”
Section: Methodsmentioning
confidence: 99%
“…The reaction benefits from high versatility. Recently, we have highlighted the design of photoresponsive epoxy‐based networks that undergo controlled network degradation upon UV exposure . The photosensitive links enabled a spatially controlled degradation of the covalent polymer network upon UV exposure and a switch both in the solubility properties and in the thermomechanical performance.…”
Section: Introductionmentioning
confidence: 99%
“…At prolonged UV exposure, a re‐crosslinking of the cleaved polymer chains is observed through secondary reactions (e.g., formation of azobenzene groups by dimerization of nitroso‐benzaldehyde moieties) that leads to an increase in the gel content. [ 16–21 ]…”
Section: Figurementioning
confidence: 99%
“…[ 15 ] In previous studies, we explored the possibility to introduce o ‐NBE moieties in a wide range of different networks such as epoxy and methacrylic ones as well as thiol‐ene, thiol‐epoxy and thiol‐yne polymer networks fabricated by click chemistry. [ 16–20 ] In this context, thiol‐ene networks containing o ‐NBE moieties were used as positive/negative tone photoresist with good resolution. [ 21 ] In addition to the use of o ‐NBE for producing photoresists, we also showed the possibility to modify surface properties of the network through UV‐induced photocleavage, by exploiting the formation of polar species such as carboxylic acids.…”
mentioning
confidence: 99%
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