Photoconducting polymer nanocomposites with efficient photogeneration and bipolar transport for optoelectronic applications

Volatile Electrical Switching and Static Random Access Memory Effect in a Functional Polyimide Containing Oxadiazole Moieties

“…14 Polyimides have been widely adopted as insulating or dielectric materials in electrical and electronic devices because of their good thermal stability, good processability, and superior dielectric and mechanical properties. 15 Polyimides have also been investigated for applications in photovoltaics, 16,17 light-emitting diodes, 18,19 xerography, 20 and polymer memories. [21][22][23][24] On the other hand, oxadiazole-based polymers have been shown to be promising electron-transporting materials in light-emitting devices, due to their high electron affinity, as well as thermal, hydrolytic, and optical stability.…”

Effect of polymerization potential on the actuation of free standing poly-3,4-ethylenedioxythiophene films in a propylene carbonate electrolyte

“…The conducting polymer poly-3,4-ethylenedioxythiophene (PEDOT) has been applied in light emitting diodes [1], conductive fillers [2] and anti-static elements [3], but has seldom been considered for use in actuator devices [4]. Conducting polymer actuators in the form of free standing films have mainly been based upon polypyrrole (PPy) [5][6][7] and less research has been undertaken using PEDOT.…”

Photostimulated currents and magnetic spin effects in organic p-n polymeric heterostructures

“…The strongest irreversible influence of heating (tempera ture hysteresis) was observed for a HS with a volume interface (polyimide composites with dopant particles or triple microsegregated composites of polyimides with carbazolyl containing polymers and dopant par ticles [8]). The results obtained are explained by photo and thermofield stimulation and liberation of carriers captured by deep centers of the Coulomb nature (Pool-Frenkel pairs [9]).…”

“…(1) Volume interface (triple microsegregated com posite layers P1 + P6 + 50 wt % D1 and P1 + P5 (P4) + 50 wt % D1, in which there are p and n microregions bordering on each other [6] and layers of simple p and n composites themselves (P1 + 50 wt % D1(D2), P5 (P4) + 50 wt % D1(D2)) in which p-n microhetero junctions are formed at particle (aggregate) bound aries between dopants D1(D2) (n conductor) and polymers (P1, P5(P4), p conductor [8]). The through drift length of electrons in the P1 + D1(D2) p com posite is much smaller than the drift length of holes, in spite of their high micromobility inside dopant parti cles.…”