Photoconduction in GaSe thin films

Anis, Mohammad Khalid; Zaheer, M. Y.; Nazar, Fateh Mohammad

doi:10.1080/00207218108901303

Cited by 11 publications

(3 citation statements)

References 5 publications

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“…The photoconductivity of GaSe thin films grown by the flash evaporation technique was measured in the temperature region of 77-300 K [14]. The photocurrent reported there is measured for only one applied illumination intensity (I ph -F dependence is not considered).…”

Section: Photoconduction Propertiesmentioning

confidence: 99%

Optoelectronical properties of polycrystallineβ -GaSe thin films

Qasrawi

Ahmad

2006

Cryst. Res. Technol.

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Polycrystalline β-GaSe thin films were obtained by the thermal evaporation of GaSe crystals onto glass substrates kept at 300 o C under a pressure of 10 -5 Torr. The transmittance and reflectance of these films was measured in the incident photon energy range of 1.1-3.70 eV. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct allowed transitions band gap of 1.83 eV. The data analysis allowed the identification of the dispersive optical parameters by calculating the refractive index in the wavelength region of 620-1100 nm. In addition, the photocurrent of the samples was studied as function of incident illumination-intensity and temperature. The photocurrent is found to exhibit sublinear and supralinear character above and below 270 K, respectively. The temperature dependent photocurrent data analysis allowed the calculation of photocurrent activation energies as 603, 119 and 45 meV being dominant in the temperature regions of 250-300 K, 180-240 K and 80-160 K, respectively.

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Section: Photoconduction Propertiesmentioning

confidence: 99%

Optoelectronical properties of polycrystallineβ -GaSe thin films

Qasrawi

Ahmad

2006

Cryst. Res. Technol.

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“…However, in spite of GaSe importance in optical applications, the data reported about it is optical properties still lack of details about the refractive index, dielectric constant and dispersion values. The published optical data reported the photovoltaic effect and photoconduction in GaSe [10,11]. In addition, the indirect allowed, and direct forbidden transitions in polycrystalline GaSe thin films prepared by the sputtering technique at high substrate temperatures is reported [7].…”

Section: Introductionmentioning

confidence: 96%

Refractive index, band gap and oscillator parameters of amorphous GaSe thin films

Qasrawi

2005

Cryst. Res. Technol.

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GaSe thin films are obtained by evaporating GaSe crystals onto ultrasonically cleaned glass substrates kept at room temperature under a pressure of ~10 -5 Torr. The X-ray analysis revealed that these films are of amorphous nature. The reflectance and transmittance of the films are measured in the incident photon energy range of 1.1-3.0 eV. The absorption coefficient spectral analysis revealed the existence of long and wide band tails of the localized states in the low absorption region. The band tails width is calculated to be 0.42 eV. The analysis of the absorption coefficient in the high absorption region revealed an indirect forbidden band gap of 1.93 eV. The transmittance analysis in the incidence photon wavelength range of 500-1100 nm allowed the determination of refractive index as function of wave length. The refractive index-wavelength variation leads to the determination of dispersion and oscillator energies as 31.23 and 3.90 eV, respectively. The static refractive index and static dielectric constant were also calculated as a result of the later data and found to be 9.0 and 3.0, respectively.

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“…Photoconduction measurements can give information about these levels which is often helpful in understanding the electronic processes in these materials. In addition such measurements can also provide useful information about the energy band structure of the material such as its band gap (Anis et al 1981). The intercept on the energy axis obtained by the extrapolation of the linear region of the photoresponse curve gives a measure of the photoconductive band gap in phosphate oxide glasses .…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of photoconductivity in CdO-P₂O₅glass

Nazar

Ghauri

Bokhari

1983

International Journal of Electronics

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Temperature dependence ofphotoconductivity in CdO-P20s glass .FATEH l\1UHAlVlMAD NAZARt, MOHAMMAD ASLAM: GHAURIt and WAQAR HAIDER BOKHARIt Photoconduction in cadmium phosphate glass samples (liD mol. % CdO-50 mol. % 1\05) has been measured in the spectral energy range 1-;)-6,2 eV at different temperatures. Ext.rapolat.ion of the linear region of the normalized photocurrent versus photon energy curve gives 4·90 cV as the photoconductive band gap at room tern. perature in this material. The activation energies for the dark and photocurrcnts indicate that the conduction processes aTC electronic in nature.

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Photoconduction in GaSe thin films

Cited by 11 publications

References 5 publications

Optoelectronical properties of polycrystallineβ -GaSe thin films

Optoelectronical properties of polycrystallineβ -GaSe thin films

Refractive index, band gap and oscillator parameters of amorphous GaSe thin films

Temperature dependence of photoconductivity in CdO-P₂O₅glass

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Photoconduction in GaSe thin films

Cited by 11 publications

References 5 publications

Optoelectronical properties of polycrystallineβ -GaSe thin films

Optoelectronical properties of polycrystallineβ -GaSe thin films

Refractive index, band gap and oscillator parameters of amorphous GaSe thin films

Temperature dependence of photoconductivity in CdO-P2O5glass

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Temperature dependence of photoconductivity in CdO-P₂O₅glass