1962
DOI: 10.1002/pssb.19620020413
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Photoconductivity in Indium Sulfide

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Cited by 35 publications
(16 citation statements)
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“…It can also be used as n-type semiconductor with a medium energy gap between 2.00 and 2.20 eV (22), photoconductor (23,24), materials in the preparation of green and red phosphors and in the manufacture of picture tubes for color televisions (25)(26)(27), dry cells (28), and heterojunctions for use in photovoltaic electric generators (29).…”
Section: Introductionmentioning
confidence: 99%
“…It can also be used as n-type semiconductor with a medium energy gap between 2.00 and 2.20 eV (22), photoconductor (23,24), materials in the preparation of green and red phosphors and in the manufacture of picture tubes for color televisions (25)(26)(27), dry cells (28), and heterojunctions for use in photovoltaic electric generators (29).…”
Section: Introductionmentioning
confidence: 99%
“…However, because this compound tends to have a defect structure and there is difficulty in growing homogeneous single crystals, there has, as yet, been little research except on structural properties [3], photoconductivity [4], and photoluminescence [5] of In2S3 and the optical properties of GazS3 [2]. No research on In 2 ~GaxS3 has been reported so far.…”
mentioning
confidence: 95%
“…␤-In 2 S 3 has promising optoelectronic, electronic, optical and acoustic properties [9][10][11][12][13][14][15]. It is used in variety of applications such as a photoconductor [16,17], precursor in the preparation of phosphors, in the manufacture of dry cells [18] and in picture tubes for color television [19,20]. Our study shows that these materials, as prepared by precursor route, exhibit both mass fractal and surface fractal features in different length scales and the heat treatment significantly modifies the fractal characteristics.…”
Section: Introductionmentioning
confidence: 82%