Photoconductivity kinetics in AgIn5S8 thin films

Design and characterization of MoO3/In2Se3heterojunctions as terahertz/gigahertz band filters suitable for visible light communications and 3G/4G technologies

“…While sublinear recombination presented by h = 0.50 indicates that the Fermi level is balancing the trap states. In this case, density of charge carriers filling trap states that localized below Fermi level is less than those captured by trap states above Fermi level [28][29][30]. Values of h between 0.50 and 1.0 is then assigned to the existence of continuous trap distribution in which the free carrier density is less than the density of trap charge carriers and less than empty recombination centers [28][29][30].…”

“…In this case, density of charge carriers filling trap states that localized below Fermi level is less than those captured by trap states above Fermi level [28][29][30]. Values of h between 0.50 and 1.0 is then assigned to the existence of continuous trap distribution in which the free carrier density is less than the density of trap charge carriers and less than empty recombination centers [28][29][30]. In relation to the optical analyses, we have shown that the tails state widen (E U ) when In 2 Se 3 is coated onto MoO 3 .…”

Thin films of AgIn5(S/Se)8 prepared in a two stage process

“…Qasrawi [19] obtained polycrystalline cubic AgIn 5 S 8 samples, which exhibit direct allowed transitions and band gap energy of 1.78 eV. Photoconductivity of the as-grown and nitrogen heat-treated AgIn 5 S 8 films displays two recombination centers located at 66 and 16 meV [20]. Effects of temperature on the fundamental absorption edge produce a shift of the energy band gap from 1.78 to 1.73 eV as temperature boosts from 300 to 450 K. What is more, the fundamental absorption edge exhibited a temperature coefficient of -3.56 9 10 -4 eV/K [21].…”