Photoconductivity of Si/Ge structures

Arndt, M.; Koschinski, W.; Dettmer, K.; Keßler, F. R.; Kriks, H.J.

doi:10.1063/1.115189

Cited by 3 publications

(2 citation statements)

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“…In 11-tungsto-1-vanadophosphoric acid, the photosensitivity increases with illumination level and the photosensitivity at an illuminated intensity of 3000 lx is found to be 0. 16…”

Section: Steady State Photoconductivitymentioning

confidence: 99%

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Protonic and Photoconductivity Studies on Heteropolyanion of H3+xPVxW12?xO40 � n H2O Single Crystals

Padiyan

Ethilton

Murugesan

2001

phys. stat. sol. (a)

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Protonic conductivity measurements are reported for H 3+x PV x W 12--x O 40 Á nH 2 O single crystals with x ¼ 1, 2 and 3. The analysis of log s versus 10 3 /T curves suggests that the conductivity increases with increase in temperature in the crystals with two distinct linear regions. The activation energy in the first region decreases with increase in vanadium concentration. There is a general trend towards increase in room temperature conductivity with increase in vanadium concentration. Steady state photoconductivity measurements have been studied at different illumination levels and the ln I ph versus ln F plots indicate the existence of a continuous distribution of localised states in these materials. The photosensitivity increases with increase in x. The photo decay time constant is found to be a multivalued function and the decay law is nearly hyperbolic.

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“…In 11-tungsto-1-vanadophosphoric acid, the photosensitivity increases with illumination level and the photosensitivity at an illuminated intensity of 3000 lx is found to be 0. 16…”

Section: Steady State Photoconductivitymentioning

confidence: 99%

“…Photoconductivity is the convolution of photo-induced charge generation [15] and is a powerful tool to investigate semiconducting materials [16]. Polyoxometalates are known to be photosensitive in the near visible and UV regions in the presence of a great variety of organic compounds [17,18].…”

Section: Introductionmentioning

confidence: 99%

Protonic and Photoconductivity Studies on Heteropolyanion of H3+xPVxW12?xO40 � n H2O Single Crystals

Padiyan

Ethilton

Murugesan

2001

phys. stat. sol. (a)

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Photoconductivity of Si/Ge buffers, superlattices, and multiple quantum wells

et al. 1999

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Lateral and cross-well transport of highly and moderately excited carriers in Si1−xGex/Si superlattices

Galeckas

Juodkazis

Vanagas

et al. 1998

Journal of Applied Physics

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Picosecond transient reflectometry and dynamic grating techniques have been applied to investigate the perpendicular and parallel transport of optically excited carriers in strained-layer Si0.83Ge0.17/Si superlattices. We present results of the carrier ambipolar diffusivity and effective lifetime measurements in the layered structure and substrate within the 1017–1020 cm−3 density range. The combined experimental data are discussed in terms of parallel and perpendicular diffusion of carriers, interface recombination, and lattice heating. The estimated lateral and cross-well diffusion constants are 10 and 0.16 cm2/s at room temperature, respectively.

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Photoconductivity of Si/Ge structures

Cited by 3 publications

References 1 publication

Protonic and Photoconductivity Studies on Heteropolyanion of H3+xPVxW12?xO40 � n H2O Single Crystals

Protonic and Photoconductivity Studies on Heteropolyanion of H3+xPVxW12?xO40 � n H2O Single Crystals

Photoconductivity of Si/Ge buffers, superlattices, and multiple quantum wells

Lateral and cross-well transport of highly and moderately excited carriers in Si1−xGex/Si superlattices

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