Photoconductivity spectra and deep levels in the irradiated p+–n–n+ Si detectors

Kalendra, Vidmantas; Gaubas, E.; Kažukauskas, V.; Ža̧sinas, E.

doi:10.1016/j.nima.2009.08.043

Cited by 4 publications

(6 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(7) and (8) with the fluence, indicates a more effective simultaneous increase of the acceptor like deep levels in the lower part of the bandgap. The increased concentration of the deep levels in the lower part of the bandgap was previously shown in the neutron irradiated silicon by the measurement of photoconductivity in the extrinsic region [32].…”

Section: Electron Concentration Dependence On the Neutron Irradiationsupporting

confidence: 60%

Neutron irradiation influence on mobility and compensation of dark conductivity in silicon

Mekys¹,

Rumbauskas²,

Storasta³

2016

Lith. J. Phys.

View full text Add to dashboard Cite

The electrical properties of the neutron irradiated Si were analysed by means of the Hall effect and magnetoresistance temperature dependence. It was demonstrated that the electron mobility decreased with increasing the neutron fluence in a wide fluence range, and the microinhomogeneities in samples caused differences between the mobility values from the measured Hall and magnetoresistance effects. Exploiting the magnetoresistance mobility temperature dependence, the free carrier concentration dependence on temperature was analysed. It was found that the neutron irradiation introduced deep levels in the upper part of the bandgap, but their contribution decreased with increasing the neutron fluence – that is explained by more effective generation of acceptor type levels in the middle or lower part of the bandgap. The activation energy of the free carrier concentration did not follow the homogeneous semiconductor model, so the dark conductivity origin, that is related to the modified cluster model and cluster environment, was proposed.

show abstract

Section: Electron Concentration Dependence On the Neutron Irradiationsupporting

confidence: 60%

Neutron irradiation influence on mobility and compensation of dark conductivity in silicon

Mekys¹,

Rumbauskas²,

Storasta³

2016

Lith. J. Phys.

View full text Add to dashboard Cite

show abstract

“…3 and 4. These results confirm the data obtained during the preliminary investigation presented in [13], and also theoretical models [4] that a system of many vacancies and different other defect transformations has many possibilities, and the performed measurements give the "fingerprint" of the sample but do not characterise all created centres. The analysis of photoconductivity spectrum dependence on temperature shows that an additional photoconductivity band appears at higher temperatures.…”

Section: Resultssupporting

confidence: 88%

Deep level contribution to the carrier generation and recombination in high resistivity Si irradiated by neutrons

Bondzinskas¹,

Kažukauskas²,

Malinovskis³

et al. 2011

Lith. J. Phys.

View full text Add to dashboard Cite

Deep level spectroscopy in neutron irradiated FZ and MCz Si was performed by extrinsic photoconductivity spectra measurements in the range of temperature of 18-120 K. The lukovsky model was used, and the Gaussian distribution of deep level energy demonstrated the best fit of simulation and experimental data. The nonmonotonous change of deep levels during annealing, and non-monotonous dependence of their concentration on the fluence were observed. The photoconductivity decay was investigated by the transient photo-Hall effect, recombination parameters of the main recombination centre were determined, and the recombination centre model was proposed. The photoconductivity and thermally stimulated current measurements were used to demonstrate the existence of photogeneration of free carriers by a cascade of optical and thermal transitions.

show abstract

“…Such behavior was also observed in previous experiments performed after neutron irradiation, see e.g. [8], paid to the intrinsic photoconductivity region. Figure 3 also demonstrates the results of analyses using the method of determination of the deep level optical activation energies, as described in [8].…”

Section: Resultssupporting

confidence: 86%

“…Characteristically, no photoconductivity increase was observed in the samples irradiated by less than 1 × 10 15 n cm −2 fluence in the spectral region beyond hν > 1.4 eV. The same behavior has been observed in [8,10].…”

Section: Resultssupporting

confidence: 72%

“…[8], paid to the intrinsic photoconductivity region. Figure 3 also demonstrates the results of analyses using the method of determination of the deep level optical activation energies, as described in [8]. It proves that the deep defect states are prominent in the irradiated samples, and these states could be effective in the impact ionization processes as described below.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Increase of the photoconductivity quantum yield in silicon irradiated by neutrons to extremely high fluences

Moll

Kažukauskas

Vertelis

2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

An enhanced quantum yield observed in silicon ionizing radiation detectors, neutron-irradiated to extremely high fluences, could be attributed to impact ionization via deep levels. The quantum yield was investigated by the intrinsic photoconductivity optical spectroscopy in silicon irradiated by neutrons to a wide range of fluences up to 1×1017neutron/cm2. An increase of quantum yield was observed in highly irradiated samples. We have demonstrated that the quantum yield enhancement could be attributed to the impact ionization via deep levels, this process being presumably related to disordered defect clusters regions in Si. The proposed mechanism explains the observed decrease of the impact ionization energy by at least an order of magnitude at low temperature. The impact ionization energy values of up to 0.30-0.36 eV and less, and 0.38-0.40 eV were determined at T~21-33 K and at T=195 K, respectively.

show abstract

Photoconductivity spectra and deep levels in the irradiated p+–n–n+ Si detectors

Cited by 4 publications

References 9 publications

Neutron irradiation influence on mobility and compensation of dark conductivity in silicon

Neutron irradiation influence on mobility and compensation of dark conductivity in silicon

Deep level contribution to the carrier generation and recombination in high resistivity Si irradiated by neutrons

Increase of the photoconductivity quantum yield in silicon irradiated by neutrons to extremely high fluences

Contact Info

Product

Resources

About