2022
DOI: 10.1039/d2dt00143h
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Photocurrent, humidity sensitivity and proton conductivity properties of a new sulfide semiconductor CsCuS4

Abstract: Copper chalcogenides have drawn considerable attention due to their prominent semiconductor properties. A new Cu-containing semiconductor, namely, CsCuS4 (1), was obtained by halide salt flux method. Its structure featured 1D...

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Cited by 2 publications
(3 citation statements)
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“…Although this value is lower than that of classical photovoltaic materials, Cu 2 ZnSnS 4 (87 μA cm –2 ), it is still higher than those of some reported chalcogenides, such as Rb 2 Ba 3 Cu 2 Sb 2 S 10 (6 nA cm – ), BaCuSbS 3 (ca. 55 nA cm –2 ), and CsCuS 4 (0.4 μA cm –2 ) . Compared with Cd-analogues, AgHgAsS 3 possess a higher photocurrents density, which indicates that AgHgAsS 3 may have a higher separation efficiency of the photogenerated electrons and holes. , Although AgCdAsS 3 displays a direct band gap (Figure S6), which is more beneficial to electron transitions from VB to CB forming photogenerated carriers than an indirect band gap, AgHgAsS 3 has a narrower indirect band gap (1.90 eV) than AgCdAsS 3 (2.20 eV), meaning that AgHgAsS 3 can absorb and utilize a wider range of light.…”
Section: Resultsmentioning
confidence: 99%
“…Although this value is lower than that of classical photovoltaic materials, Cu 2 ZnSnS 4 (87 μA cm –2 ), it is still higher than those of some reported chalcogenides, such as Rb 2 Ba 3 Cu 2 Sb 2 S 10 (6 nA cm – ), BaCuSbS 3 (ca. 55 nA cm –2 ), and CsCuS 4 (0.4 μA cm –2 ) . Compared with Cd-analogues, AgHgAsS 3 possess a higher photocurrents density, which indicates that AgHgAsS 3 may have a higher separation efficiency of the photogenerated electrons and holes. , Although AgCdAsS 3 displays a direct band gap (Figure S6), which is more beneficial to electron transitions from VB to CB forming photogenerated carriers than an indirect band gap, AgHgAsS 3 has a narrower indirect band gap (1.90 eV) than AgCdAsS 3 (2.20 eV), meaning that AgHgAsS 3 can absorb and utilize a wider range of light.…”
Section: Resultsmentioning
confidence: 99%
“…The photocurrent density of α-Ag 4 P 2 S 6 and β-Ag 4 P 2 S 6 is 165 nA cm −2 and 135 nA cm −2 , respectively. A comparison of photocurrent response among α-Ag 4 P 2 S 6 , β-Ag 4 P 2 S 6 and many previously reported sulfides is summarized in Table S2 † 51,114–124 . α-Ag 4 P 2 S 6 and β-Ag 4 P 2 S 6 show better photocurrent response than many sulfides such as BaCuSbS 3 (55 nA cm −2 ), 121 Cs 2 Ag 2 Zn 2 S 4 (50 nA cm −2 ), 122 Rb 2 Ba 3 Cu 2 Sb 2 S 10 (6 nA cm −2 ), 123 and TlHgInS 3 (0.35 nA cm −2 ).…”
Section: Resultsmentioning
confidence: 99%
“…A comparison of photocurrent response among α-Ag 4 P 2 S 6 , β-Ag 4 P 2 S 6 and many previously reported sulfides is summarized in TableS2. †51,[114][115][116][117][118][119][120][121][122][123][124] α-Ag 4 P 2 S 6 and β-Ag 4 P 2 S 6…”
mentioning
confidence: 99%