Photocurrent limit in nanowires

Xi, Haowen

doi:10.1364/ol.38.004698

Cited by 13 publications

(12 citation statements)

References 10 publications

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“…Very recently, for NW devices based on ZnO and PbS, Ullrich reported on a change of the power-law exponent from close to unity for smaller illumination intensities to 0.5 for very high illumination powers . Interestingly, the power-law exponent of 0.8 for our QNWs devices did not change over the whole range of illumination intensities.…”

Section: Results and Discussionsupporting

confidence: 45%

“…40 Very recently, for NW devices based on ZnO and PbS, Ullrich reported on a change of the power-law exponent from close to unity for smaller illumination intensities to 0.5 for very high illumination powers. 42 Interestingly, the power-law exponent of 0.8 for our QNWs devices did not change over the whole range of illumination intensities. However, we cannot exclude any change in the exponent for even larger illumination intensities than the maximum of 240 mW/cm 2 as used in our experiments.…”

Section: ■ Results and Discussionmentioning

confidence: 71%

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Solution-Grown Nanowire Devices for Sensitive and Fast Photodetection

Littig¹,

Lehmann²,

Klinke³

et al. 2015

ACS Appl. Mater. Interfaces

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Highly sensitive and fast photodetector devices with CdSe quantum nanowires as active elements have been developed exploiting the advantages of electro- and wet-chemical routes. Bismuth nanoparticles electrochemically synthesized directly onto interdigitating platinum electrodes serve as catalysts in the following solution-liquid-solid synthesis of quantum nanowires directly on immersed substrates under mild conditions at low temperature. This fast and simple preparation process leads to a photodetector device with a film of nanowires of limited thickness bridging the electrode gaps, in which a high fraction of individual nanowires are electrically contacted and can be exposed to light at the same time. The high sensitivity of the photodetector device can be expressed by its on/off ratio or its photosensitivity of more than 10(7) over a broad wavelength range up to about 700 nm. The specific detectivity and responsivity are determined to D* = 4 × 10(13) Jones and R = 0.32 A/W, respectively. The speed of the device reflects itself in a 3 dB frequency above 1 MHz corresponding to rise and fall times below 350 ns. The remarkable combination of a high sensitivity and a fast response is attributed to depletion regions inside the nanowires, tunnel-junction barriers between nanowires, and Schottky contacts at the electrodes, where all of these features are strongly influenced by the number of photogenerated charge carriers.

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Section: Results and Discussionsupporting

confidence: 45%

Section: ■ Results and Discussionmentioning

confidence: 71%

Solution-Grown Nanowire Devices for Sensitive and Fast Photodetection

Littig¹,

Lehmann²,

Klinke³

et al. 2015

ACS Appl. Mater. Interfaces

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“…It was fitted by a power law (Δ j = 1.6 × 10 –2 ϕ 0 0.63 ). The generation rate of photoelectrons by incident light ( G pe ) is given by the expression , where B c is the recombination coefficient, n pe is the density of photoelectrons, and M is number of impurity levels per cm 3 . For BiVO 3 F n pe ≫ M and eq follows a power law: This suggests the dominant photocarrier decay mechanism is from e–h recombination rather than a trap-dominated recombination process.…”

Section: Resultsmentioning

confidence: 99%

“…It was fitted by a power law (j=1.6x10 -2 f0 0.63 ). The generation rate of photoelectrons by incident light (Gpe) is given by the expression 45,46 :…”

Section: Figure 5 A) Total and Atomic Resolved Projected Dos For Bivo3f (U=3 Ev Fm/afm Spin Polarized Configuration)b) Diffuse-reflectancmentioning

confidence: 99%

S = 1/2 Chain in BiVO₃F: Spin Dimers versus Photoanodic Properties

et al. 2021

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BiVO3F was prepared, characterized and identified as the unique example of bismuth vanadyl oxyhalide with paramagnetic V 4+ centres. Its crystal structure shows 1D magnetic units with rare alternation of edge sharing O-O and F-F µ2 bridges along the octahedral chains. Structural pairing across the O2 edges induces antiferromagnetic spin dimers(S=0) with J/Kb300K, ⁓15 times greater than the exchange across the F2 bridges, within a non-ordered magnetic ground state. Despite multiple compositional, structural, and electronic analogies with the BiVO4 scheelite compound, one of the most promising photo-anode for solar water splitting, the photo activity of BiVO3F is relatively modest, partially due to this electronic pairing playing for fast electron-hole recombination. Similar to monoclinic-VO2, the V 4+ spin dimerization plays against the singlet → triplet electronic photo-excitation, but brings potential carrier lifetime benefits. The reduction of the bandgap from Eg 2.4 eV to 1.7 eV after incorporation of d 1 cations in BiVO4 makes BiVO3F an inspiring compound for local modifications toward an enhanced photo-active material. The direct d → d transition provides a significant enhancement of the visible light capture section, and opens a prospective route for the chemical design of performant photoanodes with a mixed anionic sublattice.

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“…This behavior can be assigned to the presence of structural defects acting as photoelectron traps within the structure. 20 Finally, the stable photocurrent upon successive measurements (Fig. S7, ESI †) indicates very good stability of these samples.…”

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confidence: 80%