Photocurrent spectra for above and below bandgap energies from photovoltaic PbS infrared detectors with graphene transparent electrodes

Kim, Jungdong; Ampadu, Emmanuel K.; Oh, Eunsoon; Choi, Hyung Do; Ahn, Hak-Young; Cho, So-Hye; Choi, Won Jun; Byun, Ji Young

doi:10.1016/j.cap.2020.01.006

Cited by 14 publications

(12 citation statements)

References 28 publications

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“…For larger RPM, the deposition rate on the substrates was decreased and the chemical reaction inside the solution was rather increased, which resulted in thinner films as shown in Figure 1b. We reported earlier on Au/PbS/TiO2/FTO vertical photovoltaic devices and measured photo response up to the terahertz range [22]. In this paper, we show that metal/PbS/metal lateral photovoltaic detectors can be fabricated by simply depositing PbS directly on two metal electrodes.…”

Section: Discussionmentioning

confidence: 61%

“…The fast rise was from the influence of the internal electric (drift) field due to the Schottky barrier formed between Ti and PbS (top right inset of Figure 3 a). The Schottky barrier characteristics of Ti and PbS have been reported earlier [ 22 , 23 , 36 , 37 ]. As the laser was turned off, a sharp fall of the photocurrent transient was observed.…”

Section: Discussionmentioning

confidence: 68%

“…Sub-bandgap photoconductivity from PbS was also observed up to the order of 10 µm, which was attributed to the impurity band absorption [ 26 , 27 ]. From PbS vertical devices sub-bandgap photocurrent response was observed, where the maximum response was at around 15 µm [ 22 ]. The photocurrent spectrum from the vertical structure is included for comparison.…”

Section: Discussionmentioning

confidence: 99%

“…Due to the narrow bandgap (~0.4 eV), the dark current background noise is expected to be relatively large, reducing the detectivity. On the other hand, photovoltaic PbS devices are developed with various heterojunctions [ 19 , 20 , 21 ] and with Ti/PbS Schottky junctions [ 22 , 23 ]. Photovoltaic devices which do not require any external bias have the advantages of negligible dark currents, low noise level and fast response.…”

Section: Introductionmentioning

confidence: 99%

“…We reported earlier on Au/PbS/TiO 2 /FTO vertical photovoltaic devices and measured photo response up to the terahertz range [ 22 ]. In this paper, we show that metal/PbS/metal lateral photovoltaic detectors can be fabricated by simply depositing PbS directly on two metal electrodes.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Ampadu

Kim

2021

Nanomaterials

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We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields.

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Section: Discussionmentioning

confidence: 61%

Section: Discussionmentioning

confidence: 68%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Ampadu

Kim

2021

Nanomaterials

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An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr₂S₃ for Broadband Photodetection with High Responsivity

Xie

Wang

et al. 2020

Adv Elect Materials

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Infrared (IR) photodetectors are essential for optical communication, imaging, and medical and environmental monitoring technologies. However, current IR photodetectors relying on conventional narrow‐gap semiconductors require strict lattice match epitaxy and expensive manufacturing methods, and the incompatibility with complementary metal‐oxide‐semiconductor technique cannot meet the requirement of high integration and miniaturization. Here, the controllable growth of an ultrathin narrow‐gap semiconductor Cr2S3, with thickness down to unitcell of ≈1.85 nm, is reported using chemical vapor deposition method. The as‐grown 2D Cr2S3 exhibits outstanding environmental stability with negligible degradation even after exposure in air for more than two months. By combining the optics Fourier transfer infrared spectrometer with density functional theory calculations, the bandgap of the synthesized Cr2S3 nanoflakes is determined to be 0.15 eV. A photodetector based on the 2D Cr2S3 exhibits a high responsivity (14.4 A W−1 at 520 nm, 6.0 A W−1 at 808 nm, and 3.0 A W−1 at 1550 nm) and excellent detectivity (4.0 × 1010 Jones at 520 nm, 1.7 × 1010 Jones at 808 nm, and 8.3 × 109 Jones at 1550 nm) under ambient conditions. These findings indicate that the air‐stable 2D narrow‐gap semiconductor Cr2S3 can act as a highly competitive candidate for broadband photodetector application and fundamental photophysics investigation.

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Chemically deposited Sn-doped PbS thin films for infrared photodetector applications

2021

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Lead sulfide is a potential infrared (IR) photodetector material because of its favorable optoelectronic properties. The physical and chemical properties of PbS can be modified by a systematic doping of elements. In this study, we have doped 1-3 at% of Sn into PbS by a chemical bath deposition method. The undoped PbS films exhibited cubic crystal structure with a lattice parameter of a = 0.594 nm , an uneven grain growth, a direct optical band gap of 0.44 eV and a hole mobility of 8.9 cm 2 V −1 s −1 . The Sn-doping has improved the microstructure and slightly decreased the band gap of PbS. The hole mobility of PbS films has increased to 20 cm 2 V −1 s −1 with Sn-doping (1-2 at%). Thus, the PbS films grown by Sn-doping with improved microstructure, decreased band gap, and increased electrical properties are beneficial for IR photodetector applications.

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Photocurrent spectra for above and below bandgap energies from photovoltaic PbS infrared detectors with graphene transparent electrodes

Cited by 14 publications

References 28 publications

Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr₂S₃ for Broadband Photodetection with High Responsivity

Chemically deposited Sn-doped PbS thin films for infrared photodetector applications

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Photocurrent spectra for above and below bandgap energies from photovoltaic PbS infrared detectors with graphene transparent electrodes

Cited by 14 publications

References 28 publications

Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr2S3 for Broadband Photodetection with High Responsivity

Chemically deposited Sn-doped PbS thin films for infrared photodetector applications

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An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr₂S₃ for Broadband Photodetection with High Responsivity