Photocurrent spectroscopy investigation of deep level defects in Mg-doped GaN and Mg-doped AlxGa1−xN (0.20&amp;lt;x&amp;lt;0.52)

Batoni, Paolo; Stokes, E. B.; LeBoeuf, S. F.; Nohava, Thomas

doi:10.1063/1.3236776

Cited by 1 publication

(2 citation statements)

References 13 publications

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“…Figure 11 Theoretical fits using Eqs. (7)(8)(9) to three AlGaN:In/sapphire samples. The mode with the peak at near 750 cm -1 , from the sapphire substrate, was fitted by a Lowrentzian.…”

Section: Raman Determination Of Carrier Concentrationmentioning

confidence: 99%

“…Al x Ga 1-x N alloys have been under intense investigation over the past few years owing to its potential in constructing AlGaN/GaN heterostructure devices, such as ultraviolet (UV) light emitting diode (LED), laser diode, UV detector, and high temperature / high power electronic devices [1][2][3][4][5][6][7][8][9][10]. Compared to In x Ga 1-x N, the research progress of Al x Ga 1-x N is considerably low mainly because of the difficulties in growing good quality layers containing high Al content.…”

Section: Introductionmentioning

confidence: 99%

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Material properties of MOCVD-grown AlGaN layers influenced by indium-incorporation

Lin

Li²,

Chen

et al. 2011

SPIE Proceedings

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A set of AlGaN epilayers were grown on sapphire (0001) substrate by MOCVD, with intermediate growths of low/high temperature AlN nucleation layers. Variable flow rates of trimethylindium (TMIn), 0, 50 and 500 sccm were introduced during growth. Three AlGaN samples were originally designed with similar Al composition of ~20%. Rutherford backscattering (RBS), RT and 10-300K photoluminescence (PL) were used for analyzing the microstructure of thin films. The Al content was calculated to decrease with increasing the In-flow rate. Main PL bands spread over 310-350 nm with peaks in 320-335 nm. PL (10-300K) exhibited anomalous temperature dependent emission behavior (specifically an S-shaped shift, i.e. red-blue-red shifts) of the AlGaN related PL emission. Carriers transfer between different luminescent centers. Abnormally high activation energy was obtained, which shows that the excitons are not in the free states. Raman Scattering and spectral line shape analysis leaded to an optical determination of the electrical property free carrier concentration of AlGaN. Our results on In-doped AlGaN provide useful information for designing UV-LEDs.

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“…Figure 11 Theoretical fits using Eqs. (7)(8)(9) to three AlGaN:In/sapphire samples. The mode with the peak at near 750 cm -1 , from the sapphire substrate, was fitted by a Lowrentzian.…”

Section: Raman Determination Of Carrier Concentrationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Material properties of MOCVD-grown AlGaN layers influenced by indium-incorporation

Lin

Li²,

Chen

et al. 2011

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

Photocurrent spectroscopy investigation of deep level defects in Mg-doped GaN and Mg-doped AlxGa1−xN (0.20<x<0.52)

Abstract: InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers

Cited by 1 publication

References 13 publications

Material properties of MOCVD-grown AlGaN layers influenced by indium-incorporation

Material properties of MOCVD-grown AlGaN layers influenced by indium-incorporation

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