Photocurrent study of the valence band splitting of AgInS2 epilayers on GaAs

Hong, Kwangjoon; Jeong, Jin Wook; Jeong, T. S.; Youn, C. J.; Lee, W.S; Park, J.S; Shin, Dong-Woon

doi:10.1016/s0022-3697(03)00026-x

Cited by 27 publications

(14 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, much attention has been paid to develop I-III-VI 2 based nanocrystal emitters for either optical device such as laser or cell imaging applications. Among these semiconductors, AgInS 2 has a relatively wider 2 band gap ranging from 1.87 eV to 2.03 eV, depending on its crystal structure [12][13][14][15]. For instance, ternary I-III-VI 2 semiconductor materials, such as AgInS 2 , CuInS 2 and Cu(InxGa1-x)Se 2 etc, have been widely investigated for their potential applications in photovoltaic solar cells, light emitting diodes, non-linear optical devices, photocatalytic H 2 evolution under visible light irradiation [14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Facile synthesis and photoluminescence characterization of AgInZnS hollow nanoparticles

Yang

Chen

et al. 2015

Materials Letters

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Facile synthesis and photoluminescence characterization of AgInZnS hollow nanoparticles

Yang

Chen

et al. 2015

Materials Letters

View full text Add to dashboard Cite

“…However, the inherent toxicity of cadmium-related QDs will limit their applications in commercial WLEDs and other related fields [ 20 , 21 , 22 , 23 , 24 , 25 , 26 ]. AgInS 2 /ZnS core/shell QDs were therefore investigated as desirable nontoxic substitutes [ 27 , 28 , 29 ]. Their photoluminescence (PL) wavelength can be adjusted from 520 nm to 680 nm with large Stokes shifts [ 30 , 31 ].…”

Section: Introductionmentioning

confidence: 99%

White Light-Emitting Diodes Based on AgInS2/ZnS Quantum Dots with Improved Bandwidth in Visible Light Communication

Ruan

Zhang

et al. 2016

Nanomaterials

View full text Add to dashboard Cite

Quantum dot white light-emitting diodes (QD-WLEDs) were fabricated from green- and red-emitting AgInS2/ZnS core/shell QDs coated on GaN LEDs. Their electroluminescence (EL) spectra were measured at different currents, ranging from 50 mA to 400 mA, and showed good color stability. The modulation bandwidth of previously prepared QD-WLEDs was confirmed to be much wider than that of YAG:Ce phosphor-based WLEDs. These results indicate that the AgInS2/ZnS core/shell QDs are good color-converting materials for WLEDs and they are capable in visible light communication (VLC).

show abstract

“…[26,32] Cyclic voltammetry (CV) is, therefore, expectedt o give am ore realisticp icture of the composition effect on the band-edge positions of theseNCs. [32] Regarding the synthesis of AIS NCs, severalm ethods have been reported to date, such as microwaveh ydrothermal, [33] hot press, [34] spray pyrolysis, [35,36] hot wall epitaxy, [37] and solvothermalm ethods. [38][39][40] Of these, the solvothermalr oute is one of the most promising chemical solution routes owing to the low cost involved and the high degree of compositional control.…”

Section: Introductionmentioning

confidence: 99%

Probing the Crystal Structure, Composition‐Dependent Absolute Energy Levels, and Electrocatalytic Properties of Silver Indium Sulfide Nanostructures

et al. 2016

View full text Add to dashboard Cite

The absolute electronic energy levels in silver indium sulfide (AIS) nanocrystals (NCs) with varying compositions and crystallographic phases have been determined by using cyclic voltammetry. Different crystallographic phases, that is, metastable cubic, orthorhombic, monoclinic, and a mixture of cubic and orthorhombic AIS NCs, were studied. The band gap values estimated from the cyclic voltammetry measurements match well with the band gap values calculated from the diffuse reflectance spectra measurements. The AIS nanostructures were found to show good electrocatalytic activity towards the hydrogen evolution reaction (HER). Our results clearly establish that the electronic and electrocatalytic properties of AIS NCs are strongly sensitive to the composition and crystal structure of AIS NCs. Monoclinic AIS was found to be the most active HER electrocatalyst, with electrocatalytic activity that is almost comparable to the MoS2 -based nanostructures reported in the literature, whereas cubic AIS was observed to be the least active of the studied crystallographic phases and compositions. In view of the HER activity and electronic band structure parameters observed herein, we hypothesize that the Fermi energy level of AIS NCs is an important factor that decides the electrocatalytic efficiency of these nanocomposites. The work presented herein, in addition to being the first of its kind regarding the composition and phase-dependence of electrochemical aspects of AIS NCs, also presents a simple solvothermal method for the synthesis of different crystallographic phases with various Ag/In molar ratios.

show abstract

Photocurrent study of the valence band splitting of AgInS2 epilayers on GaAs

Cited by 27 publications

References 11 publications

Facile synthesis and photoluminescence characterization of AgInZnS hollow nanoparticles

Facile synthesis and photoluminescence characterization of AgInZnS hollow nanoparticles

White Light-Emitting Diodes Based on AgInS2/ZnS Quantum Dots with Improved Bandwidth in Visible Light Communication

Probing the Crystal Structure, Composition‐Dependent Absolute Energy Levels, and Electrocatalytic Properties of Silver Indium Sulfide Nanostructures

Contact Info

Product

Resources

About