Photocurrent transient measurements in MAPbI3 thin films

Basumatary, Pilik; Agarwal, Pramod

doi:10.1007/s10854-020-03549-7

Cited by 46 publications

(26 citation statements)

References 25 publications

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“…A shorter τ r is attributable to the higher photosensitivity. The decay time (t decay ) is taken from the I max to I stable , which depends on the recombination rate of the photo-induced electrons and holes [59]. The average t decay of the undoped, and In-, Sn-, and (In, Sn)-doped Bi 2 Se 3 nanoplatelets are estimated as 0.091, 0.097, 0.099, and 0.105 sec.…”

Section: Raman Spectramentioning

confidence: 99%

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process

2021

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Pristine, and In-, Sn-, and (In, Sn)-doped Bi2Se3 nanoplatelets synthesized on Al2O3(100) substrate by a vapor–solid mechanism in thermal CVD process via at 600 °C under 2 × 10−2 Torr. XRD and HRTEM reveal that In or Sn dopants had no effect on the crystal structure of the synthesized rhombohedral-Bi2Se3. FPA–FTIR reveals that the optical bandgap of doped Bi2Se3 was 26.3%, 34.1%, and 43.7% lower than pristine Bi2Se3. XRD, FESEM–EDS, Raman spectroscopy, and XPS confirm defects (In3+Bi3+), (In3+V0), (Sn4+Bi3+), (V0Bi3+), and (Sn2+Bi3+). Photocurrent that was generated in (In,Sn)-doped Bi2Se3 under UV(8 W) and red (5 W) light revealed stable photocurrents of 5.20 × 10−10 and 0.35 × 10−10 A and high Iphoto/Idark ratios of 30.7 and 52.2. The rise and fall times of the photocurrent under UV light were 4.1 × 10−2 and 6.6 × 10−2 s. Under UV light, (In,Sn)-dopedBi2Se3 had 15.3% longer photocurrent decay time and 22.6% shorter rise time than pristine Bi2Se3, indicating that (In,Sn)-doped Bi2Se3 exhibited good surface conduction and greater photosensitivity. These results suggest that In, Sn, or both dopants enhance photodetection of pristine Bi2Se3 under UV and red light. The findings also suggest that type of defect is a more important factor than optical bandgap in determining photo-detection sensitivity. (In,Sn)-doped Bi2Se3 has greater potential than undoped Bi2Se3 for use in UV and red-light photodetectors.

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Section: Raman Spectramentioning

confidence: 99%

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process

2021

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“…3b. The power law index of 0.785 implies the predominant bimolecular (electron-hole) recombination [72]. Fig.…”

Section: Resultsmentioning

confidence: 98%

“…The presence of structural defects in meshed MoS 2 samples and the adsorbed impurities by the mesh-like surface take the responsibility for reduced carrier mobilities and conductance relaxation as charge trapping sites [71]. Especially, thermally generated traps can lead to photocurrent decay during illumination [72]. The photo-induced mechanism of decreasing positive photoconductivity with the increasing illumination time is proposed in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…2c) [74,75]. The recombination is known as a function of free carrier density, trap density and the probability of recombination [72]. The trap states including shallow traps and deep traps can be originated from intrinsic defects (e.g., sulfur vacancies), extrinsic charged impurities (e.g., adsorbates) or the substrate effect [43].…”

Section: Resultsmentioning

confidence: 99%

“…The carriers can be confined by these traps with corresponding short-term trapping and long-term trapping (stage (3) in Fig. 2c) [72]. The presence of recombination and trap states can affect the photoresponse.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

A hippocampus-inspired illumination time-resolved device for neural coding

Liu

et al. 2021

Sci. China Mater.

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Artificial photonic synapses have set off a new upsurge for mimicking a series of neural activities in recent years. In particular, the investigation of learning and memory behaviors with pressure or emotion and corresponding mechanisms is currently the focus of more attention. Herein, a hippocampus-inspired device based on MoS 2 for illumination time encoding is fabricated, in which the encryption technology is employed for data security. In addition, the pressureinduced memory behaviors with full memory function (memory trace) over time such as encoding, storage and retrieval are demonstrated, resulting from the decreasing positive photocurrent of the MoS 2 devices. The proposed mechanism of the memory effect when exposed to the light is elucidated in detail. Moreover, the effect of stress hormone on memory behavior is displayed via different illumination time periods and light intensities. These results indicate the potential application of MoS 2 devices in artificial neural network.

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Transient Photocurrent Response in a Perovskite Single Crystal‐Based Photodetector: A Case Study on the Role of Electrode Spacing and Bias

Mahapatra

Anilkumar

Nawrocki

et al. 2023

Adv Elect Materials

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Transient photocurrent is a widely applied characterization technique to probe the charge‐carrier photogeneration and extraction dynamics in perovskite optoelectronic devices. Despite the large number of studies on the properties of perovskite single‐crystals (SCs) photodetectors (PDs), the underlying mechanism that governs the spectral line shape of transient photocurrent is not fully understood. Here, methylammonium lead bromide (MAPbBr3)SC based PDs are used to study the effect of different electrode spacing and bias on the transient photocurrent response under blue and green light irradiation. The observed differences in the spectral line shape of the transient photocurrent are explained using three‐step carrier transport model, which reveals the occurrence of carrier trapping and a recombination process in MAPbBr3 SC. The findings are further corroborated by intensity‐dependent photocurrent and impedance spectroscopy analysis of the resulting PDs. This work provides a basic insight into the origin of the different behavior of transient photocurrent response under variable electrode distance, bias, and irradiance light, which is expected to help to further understand and optimize the performance of perovskite based PDs.

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Photocurrent transient measurements in MAPbI3 thin films

Cited by 46 publications

References 25 publications

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process

A hippocampus-inspired illumination time-resolved device for neural coding

Transient Photocurrent Response in a Perovskite Single Crystal‐Based Photodetector: A Case Study on the Role of Electrode Spacing and Bias

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