much effort has been devoted to searching for new types of photocatalytic materials for production of hydrogen, as an environment friendly fuel, via water splitting method using solar energy (or through solar water splitting). [ 1 ] In the photocatalytic process, photogenerated electronhole pairs, in a semiconductor material having a suitable bandgap, are responsible for the reduction and oxidation reactions to produce hydrogen and oxygen in conduction band (CB) and valance band (VB), respectively. These charge carriers migrate to the surface of the semiconductor to contribute to a series of specifi c reactions to perform the photocatalytic activity. Along with their important function in hydrogen production from water splitting via solar energy conversion, these photogenerated carriers, the electrons, and holes, play a very crucial role in pollutant degrada-A novel way of tuning photocatalytic activity and bandgap narrowing in epitaxial graphene/silicon carbide (EG/SiC) yields high effi ciency photocatalyst. Graphitization of SiC by high-temperature thermal decomposition method with different annealing time forms sets of EG/SiC composites having different quality of graphene layers, confi rmed by Raman spectroscopy. The Raman intensity ratio of the 2D band to the G band, I 2D / I G , represents a measure of quality and quantity of graphene and heterojunction interface layer between EG and SiC. Experimental results reveal that I 2D / I G plays a crucial role in tuning the bandgap and enhancement of photocatalytic activity of EG/ SiC composites in a systematic manner irrespective of crystal structure or size of the SiC particles. In addition, EG/SiC shows intense broad background absorption in the visible range with increasing I 2D / I G . The suitable selection of I 2D / I G for EG/SiC gives excellent photocatalytic activity under UV light, up to ≈1000% enhancement and remarkable bandgap narrowing, upto 2 eV and even lesser, which is more than ≈30% reduction, relative to the as received SiC. The effi cient control of the electronic structure in such EG/SiC heterojunctions obtained by tailoring the structural parameter I 2D / I G opens up promising pathway for bandgap engineering and enhancement of photocatalytic activity.