Photodetection and Infrared Imaging Based on Cd₃As₂ Epitaxial Vertical Heterostructures

Abstract

Due to the nontrivial electronic structure, Cd3As2 is predicted to possess various transport properties and outstanding photoresponses. Photodetectors based on topological materials are mostly made up of nanoplates, yet monolithic in situ heteroepitaxial Cd3As2 photodetectors are rarely reported to date owing to the crystal mismatch between Cd3As2 and semiconductors. Here, we demonstrate Cd3As2/Zn x Cd1–x Te/GaSb vertical heteroepitaxial photodetectors via molecule beam epitaxy. By constructing dual-Schottky junctions, these photodetectors show high responsivity and external quantum efficiency in a broadband spectrum. Based on the strong and fast photoresponse, we achieved visible light to near-infrared imaging using a one-pixel imaging system with a galvo. Our results illustrate that the integration of three-dimensional Dirac semimetal Cd3As2 with semiconductors has potential applications in broadband photodetection and infrared cameras.

Research progress on topological material-based photodetectors

“…Moreover, the R was significantly improved to 729 mA W À1 . In 2022, Yang et al 97 realized the light response from the visible to the infrared band by constructing a double heterojunction. They prepared a wideband photodetector with Cd 3 As 2 / Zn x Cd 1Àx Te/GaSb vertical heterostructure through simple and controllable magnetron sputtering and photolithography technology.…”

Circular Photogalvanic Current in Ni-Doped Cd3As2 Films Epitaxied on GaAs(111)B Substrate

“…In addition, our previous work has shown that the photoexcited carrier relaxation time (a few picoseconds) in Cd 3 As 2 films gradually increases with temperature [59,64]. And the carrier density is known to increase with temperature as well [58,65]. Therefore, under the same excitation pump power, the higher-density carriers will be excited at the elevated temperature, though the electron mobility decreases with increasing temperature.…”

Solution-grown ternary quasi-cube AgSbTe2 and its optoelectronic performance for broadband photodetection

“…[1][2][3][4][5][6] Traditional photodetectors are usually composed of semiconductor nanostructures owing to their high light absorption coefficients and tunable band gaps. [7][8][9][10] However, the preparation process of those photodetectors often requires a complex material growth process and a high-cost integrated procedure. 11 Currently, colloidal nanocrystal-based photodetectors have achieved significant development because of their outstanding advantages, such as a simple preparation process, large optical absorption cross sections and good compatibility with many kinds of substrates for device fabrication.…”