Photodetection Tuning with High Absorptivity Using Stacked 2D Heterostructure Films

Abstract

Graphene-based photodetection (PD) devices have been broadly studied for their broadband absorption, high carrier mobility, and mechanical flexibility. Owing to graphene’s low optical absorption, the research on graphene-based PD devices so far has relied on hybrid heterostructure devices to enhance photo-absorption. Designing a new generation of PD devices supported by silicon (Si) film is considered as an innovative technique for PD devices; Si film-based devices are typically utilized in optical communication and image sensing owing to the remarkable features of Si, e.g., high absorption, high carrier mobility, outstanding CMOS integration. Here, we integrate (i) Si film via a splitting/printing transfer with (ii) graphite film grown by a pyrolysis method. Consequently, p-type Si film/graphite film/n-type Si-stacked PD devices exhibited a broadband detection of 0.4–4 μm (in computation) and obtained good experimental results such as the responsivity of 100 mA/W, specific detectivity of 3.44 × 106 Jones, noise-equivalent power of 14.53 × 10−10 W/(Hz)1/2, external quantum efficiency of 0.2, and rise/fall time of 38 μs/1 μs under 532 nm laser illumination. Additionally, our computational results also confirmed an enhanced light absorption of the above stacked 2D heterostructure film-based PD device compatible with the experimental results.

Technological Evolution of Image Sensing Designed by Nanostructured Materials

“…Silicon devices are generally used in visual image sensors due to their distinct properties such as increased light absorption, larger carrier mobility, and classical CMOS integration. Designing an innovative PD device using Si film is considered a novel approach for image sensors (see Figure a) . Electronic and optoelectronic devices have been studied with rippled or wrinkled graphene, which revealed that an increase in ripple density of graphite nanostructures with the help of a supporting PDMS layer, the photoresponsivity also increased (see Figure b) .…”

“…Fabrication process of graphene-based photodetectors: (a) Fabrication process of Si/graphite film stacked layer photodetection devices. Reproduced with permission from ref . Copyright 2022 MDPI.…”

“…Designing an innovative PD device using Si film is considered a novel approach for image sensors (see Figure 8a). 37 Electronic and optoelectronic devices have been studied with rippled or wrinkled graphene, which revealed that an increase in ripple density of graphite nanostructures with the help of a supporting PDMS layer, the photoresponsivity also increased (see Figure 8b). 38 The graphene-based photodetector systems concentrated on hybrid technology to boost photoabsorption.…”

Advances in solar energy harvesting integrated by van der Waals graphene heterojunctions

“…11 It comprises a monolayer of carbon atoms arranged in a hexagon network. 7,18–42 Thus, graphene has been shown as a greatly promising material for future optoelectronic devices due to its remarkable features, including high mobility reaching up to 10 4 cm 2 V −1 s −1 at ambient temperature, exceptional thermal and electric conductivities, and ballistic transport. 12,43 Also, in the broad spectra range of visible and near-infrared (NIR), the transmittance of single layer graphene can reach 97.7%, and only 2.3% of the light intensity can be absorbed.…”

Layer-by-layer thinning of two-dimensional materials

“…Since the successful isolation of graphene in 2004 by Novoselov et al , its unique physical properties have been extensively examined, garnering significant attention from the scientific community. 11–30 Due to its distinctive structure and extensive π-conjugation, graphene exhibits outstanding electrical and optical characteristics, positioning it as a promising candidate for applications in electronics and optoelectronics. 22,23,31–35 This has sparked a race to explore high-quality 2D materials and integrate them into semiconducting devices at economical prices.…”