Photodetector Nonlinearities Due to Voltage-Dependent Responsivity

Hastings, Alexander S.; Tulchinsky, D.A.; Williams, K.J.

doi:10.1109/lpt.2009.2031165

Cited by 37 publications

(24 citation statements)

References 12 publications

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“…In contrast, at wavelengths far below the band gap the FranzKeldysh effect is less pronounced. We believe that especially at high bias, a second ECS Transactions, 16 (41) 39-48 (2009) voltage-dependent effect may additionally arise through the mechanism of impact ionization (18). A rough calculation will demonstrate the significance of impact ionization in the InGaAs region.…”

Section: Device Design and Experimental Setupmentioning

confidence: 96%

High-Power High-Linearity InGaAs/InP Photodiodes

2009

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The third-order intermodulation distortions of an InGaAs/InP modified uni-traveling carrier photodiode (MUTC-PD) are characterized using a two-tone setup. At 0.3 GHz modulation frequency and photocurrents above 40 mA the third order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to the photodiode's 3 dB bandwidth. A simple equivalent circuit model is used to explain the frequency characteristics of the intermodulation distortions. Based on experimental data, we find that the frequency characteristics of the IP3 can be attributed to the change of both the responsivity and device capacitance induced by the photocurrent and the transient voltage drop at the load and series resistors. Further investigations of the non-linear phenomena suggest that the Franz-Keldysh effect and impact ionization are the primary reasons for voltage-dependent responsivity, while low doping concentration in the p-type InGaAs absorber and space charge screening are responsible for the voltage dependent capacitance and photocurrent dependent capacitance, respectively.

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Section: Device Design and Experimental Setupmentioning

confidence: 96%

High-Power High-Linearity InGaAs/InP Photodiodes

2009

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“…The increase in responsivity from 0-1.5V results from the increase in electric-field across the depletion region as bias is applied which counteracts the space-charge nonlinearities at high photocurrent (20mA). After reaching the point at which there is a significant electric field (>40kV/cm) across the device, temperature dependent effects due to band-gap shifting may occur [7].…”

Section: B Responsivity Measurementmentioning

confidence: 99%

“…The photodiode linearity requirements for a radio frequency photonic link have been quantified previously in [1]. In order to meet these requirements, various nonlinearity mechanisms have been studied including nonlinear capacitance [2][3][4] which is an issue at high frequencies, transit time effects due to the electric field dependence of carrier velocities [5], [6], and most recently a voltage-dependent nonlinearity resulting from impact ionization in the depletion region [7]. Pan et al characterized the high frequency nonlinearity of a highly doped p-type absorber in a modified uni-traveling carrier (UTC) device by modeling the voltage-dependent capacitive effects [4].…”

Section: Introductionmentioning

confidence: 99%

“…The previous work looked at the original device design and its initial performance, including the responsivity as a function of photocurrent, and OIP3 as a function of bias, photocurrent and frequency. The purpose of this work is to use the analysis completed in [7] and expand it to the thirdorder in order to show the relationship between the voltagedependent responsivity and OIP3 for different variations of the original DCPD design presented in [9].…”

Section: Introductionmentioning

confidence: 99%

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Voltage-dependent nonlinearities in uni-traveling carrier directional coupled photodiodes

Draa

Scott²,

Chen³

et al. 2010

2010 IEEE International Topical Meeting on Microwave Photonics

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Voltage-dependent responsivity nonlinearities are characterized experimentally and analytically for unitraveling carrier directional coupled photodiodes (DCPD) with two types of design variations. OIP3 data follows the voltage-dependent responsivity predictions for both MMI width and PD width variations of the baseline DCPD. A maximum OIP3 of 39dBm was achieved for a device with a 3µm wide PD at 20mA and 4V.

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“…The physical mechanisms of the nonlinearity like space-charge screening, carrier bleaching, or external circuit loading have been studied in the past few years [1][2][3]. Among these studies, voltage-dependent nonlinearity was proposed to be a result of impact ionization in the depletion region of the PD [4]. As nonlinearity of the PD may modulate low-frequency noise up to the phase noise close to microwave carrier frequency, we present a new approach to quantify the residual phase noise (RPN) of the PD to find whether voltage-dependent nonlinearity has an impact on the RPN of the PD.…”

Section: Introductionmentioning

confidence: 99%

Voltage-Dependent Residual Phase Noise of a Photodiode Measurement Based on a Two-Tone Correlation Method

Zhu

Yang

Cao

et al. 2014

Journal of the Optical Society of Korea

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We propose a novel approach to measure the residual phase noise (RPN) of a photodiode (PD) based on a two-tone correlation method. Compared with the previous measurements of the RPNs of PDs, this method is more convenient in practical application. In this method, two microwave sources and other components were placed in two isolated links sharing the same PD, so the noises of them were uncorrelated. With an FFT analyzer, the uncorrelated noises could be mostly suppressed while only the RPN of the PD was preserved. Voltage-dependent nonlinearities of PDs were studied previously. In this letter, we investigate the relationship between the RPN of the PD and the bias voltage on the PD. By changing the bias voltage, the difference of the RPN can be up to 10 dB.

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Photodetector Nonlinearities Due to Voltage-Dependent Responsivity

Cited by 37 publications

References 12 publications

High-Power High-Linearity InGaAs/InP Photodiodes

High-Power High-Linearity InGaAs/InP Photodiodes

Voltage-dependent nonlinearities in uni-traveling carrier directional coupled photodiodes

Voltage-Dependent Residual Phase Noise of a Photodiode Measurement Based on a Two-Tone Correlation Method

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