Photodiode DC and microwave nonlinearity at high currents due to carrier recombination nonlinearities

Williams, K.J.; Esman, R.D.

doi:10.1109/68.681302

Cited by 49 publications

(14 citation statements)

References 12 publications

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“…We find good agreement with the measurement. A second photocurrent-dependent non-linear effect is related to the variation of responsivity with photocurrent (21). The inset of Fig.…”

Section: Experimental Results and Non-linear Phenomenamentioning

confidence: 99%

High-Power High-Linearity InGaAs/InP Photodiodes

2009

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The third-order intermodulation distortions of an InGaAs/InP modified uni-traveling carrier photodiode (MUTC-PD) are characterized using a two-tone setup. At 0.3 GHz modulation frequency and photocurrents above 40 mA the third order local intercept point (IP3) reaches 52 dBm and remains above 35 dBm up to the photodiode's 3 dB bandwidth. A simple equivalent circuit model is used to explain the frequency characteristics of the intermodulation distortions. Based on experimental data, we find that the frequency characteristics of the IP3 can be attributed to the change of both the responsivity and device capacitance induced by the photocurrent and the transient voltage drop at the load and series resistors. Further investigations of the non-linear phenomena suggest that the Franz-Keldysh effect and impact ionization are the primary reasons for voltage-dependent responsivity, while low doping concentration in the p-type InGaAs absorber and space charge screening are responsible for the voltage dependent capacitance and photocurrent dependent capacitance, respectively.

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“…We find good agreement with the measurement. A second photocurrent-dependent non-linear effect is related to the variation of responsivity with photocurrent (21). The inset of Fig.…”

Section: Experimental Results and Non-linear Phenomenamentioning

confidence: 99%

High-Power High-Linearity InGaAs/InP Photodiodes

2009

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“…In most of the reported photodetectors, nonlinear distortions are observed in photodetectors with photocurrents greater than a couple of milliamperes [15], [16]. Nonlinear distortions are attributed to high density of photogenerated carriers at high optical power, which results in nonlinear carrier velocity and, thus, saturation in the dc photocurrent level [15].…”

Section: Measurements For Ac Linearitymentioning

confidence: 99%

High power and highly linear monolithically integrated distributed balanced photodetectors

Islam¹,

Jung

Itoh

et al. 2002

J. Lightwave Technol.

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Abstract-A distributed balanced photodetector with high saturation photocurrent and excellent linearity has been experimentally demonstrated. The maximum linear direct current (dc) photocurrent of 33 mA per branch is equivalent to 66mA in single-ended photodetectors. A setup for investigating the alternating current (ac) linearity of the receiver is proposed and experimentally demonstrated. The receiver exhibits high ac linearity, even under high power operation. The bandwidth of the receiver remains unchanged when the effective dc photocurrent is varied from 1 mA to 21 mA. The distribution of photocurrents was also measured. Device length for optimum radiofrequency (RF) performance is calculated and implemented in the design. A correlation between the dark current of the photodiodes and their failure mechanism has been established. Analyzing the failure mechanism, junction diodes are found to be more suitable for high power applications.Index Terms-Analog fiber optic links, balanced photodetectors, failure mechanism, high photocurrent, high power photodiodes, metal-semiconductor-metal (MSM), microwave photonics, optical receivers, p-i-n, radiofrequency (RF) photonics.

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“…While work to determine the source of photodiode nonlinearities has begun [1][2][3][4][5], accurate mathematical models of p-i-n photodiode nonlinearities have yet to be developed. In addition, several different measurement systems are being used to measure nonlinearities, and only recently has progress has been made in reconciling these systems [6,7] to insure that accurate distortion data is being taken.…”

Section: Introductionmentioning

confidence: 99%

Quantifying current-dependant quantum efficiency photodiode nonlinearities

Hastings

Draa

Williams

2011

2011 International Topical Meeting on Microwave Photonics Jointly Held With the 2011 Asia-Pacific Microwave Photonics Conferenc

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Nonlinearities in the RF output of a p-i-n photodiode are attributed to photocurrent-dependent changes in the photodiode quantum efficiency (responsivity). Physical causes of the current dependence are discussed, and a mathematical model for calculating the resulting distortion power is presented. Photodiode responsivity is measured and used to calculate distortion, which is then compared to measured nonlinearity data.

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Photodiode DC and microwave nonlinearity at high currents due to carrier recombination nonlinearities

Cited by 49 publications

References 12 publications

High-Power High-Linearity InGaAs/InP Photodiodes

High-Power High-Linearity InGaAs/InP Photodiodes

High power and highly linear monolithically integrated distributed balanced photodetectors

Quantifying current-dependant quantum efficiency photodiode nonlinearities

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