Photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for 2.5–4.9 μm spectral range

Sherstnev, V. V.; Starostenko, D. A.; Андреев, И. А.; Konovalov, G. G.; Il’inskaya, N. D.; Serebrennikova, O. Yu.; Yakovlev, Yu. P.

doi:10.1134/s1063785011010135

Tech. Phys. Lett.

2011

DOI: 10.1134/s1063785011010135

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Photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for 2.5–4.9 μm spectral range

V. V. Sherstnev

D. A. Starostenko

И. А. Андреев

et al.

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Cited by 5 publications

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“…This parameter can be increased by using various concentrators of incident radiation, which have the form of hemispherical lenses, para bolic reflectors, Fresnel lenses, etc. [5,6]. Unfortu nately, these external devices are rather expensive and cumbersome.…”

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confidence: 98%

Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes

et al. 2012

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It is shown, using the example of InAs/InAsSb/InAsSbP heterostructures, that the formation of a curvilinear reflecting surface consisting of hemispherical etch pits on the rear side of a photodiode chip leads to an increase in the quantum efficiency of photodiodes by a factor of 1.5-1.7 in the entire mid IR wave length interval studied (λ = 3-5 μm). For the obtained photodiodes with a cutoff wavelength of 4.8 μm, a photosensitive area of 0.1 mm 2 , and a chip area of 0.9 mm 2 , a monochromatic responsivity at λ = 4.0 μm reached 0.6 A/W, while a dark current at a reverse bias voltage of 0.2 V was within 4-6 A/cm 2 .

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confidence: 98%

Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes

et al. 2012

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Cyclic degradation mechanisms in aged FeNiCoAlTa shape memory single crystals

et al. 2014

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Computer Simulation of the Metal Deformation Process in an Equal Channel Step Matrix with Additional Backpressure

Naizabekov

Lezhnev

Panin

2020

IOP Conf. Ser.: Mater. Sci. Eng.

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Theoretical studies of the process of round cross-section billets pressing in equal-channel step matrices of various designs by modeling are carried out. It was found that the backpressure created by the narrowing of the matrix channels has a favorable effect on the stress-strain state of the metal, which in turn allows for better processing of the structure of the deformable metal. It is also found that when using an equal-channel step matrix with narrowing channels, the deformation force increases, which cannot be attributed to the positive sides of these matrix designs. It was found that the most optimal results were obtained when using an equal-channel step matrix with a narrowing of the intermediate channel.

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Photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for 2.5–4.9 μm spectral range

Cited by 5 publications

References 2 publications

Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes

Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes

Cyclic degradation mechanisms in aged FeNiCoAlTa shape memory single crystals

Computer Simulation of the Metal Deformation Process in an Equal Channel Step Matrix with Additional Backpressure

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