Nanostructured Al-doped Zinc oxide (ZnO) thin¯lms were deposited on glass substrate by chemical bath deposition (CBD) using aqueous zinc nitrate solution and subjected for di®erent characterizations. E®ect of Al 3þ substitution on the properties of ZnO annealed at 400 C was studied by XRD and UV-Vis for structural studies, SEM and TEM for surface morphology and DC four probe resistivity measurements for electrical properties. Al 3þ substitution does not in°uence the morphology and well-known peaks related to wurtzite structure of ZnO. Electron microscopy (SEM and TEM) con¯rms rod shaped Al-doped ZnO nanocrystals with average width of 50 nm. The optical band gap determined by UV-Visible spectroscopy was found to be in the range 3.37 eV to 3.44 eV. An EPR spectrum of AZO reveals peak at g ¼ 1:96 is due to shallow donors Zn interstitial. The DC electrical resistivity measurements of Al-doped ZnO show a minimum resistivity of 3:77 Â 10 À2 -cm. Therefore, these samples have potential use in n-type window layer in optoelectronic devices, organic solar cells, photonic crystals, photodetectors, light emitting diodes (LEDs), gas sensors and chemical sensors.