Photoelectric Characteristics of a Large-Area n-MoS2/p-Si Heterojunction Structure Formed through Sulfurization Process

Abstract

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties. However, not much of the 2D materials research completed to date has covered large-area structures comprised of high-quality heterojunction diodes. We fabricated a large-area n-MoS2/p-Si heterojunction structure by sulfurization of MoOx film, which is thermally evaporated on p-type silicon substrate. The n-MoS2/p-Si structure possessed excellent diode characteristics such as ideality factor of 1.53 and rectification ratio in excess of 104. Photoresponsivity and detectivity of the diode showed up to 475 mA/W and 6.5 × 1011 Jones, respectively, in wavelength ranges from visible to near-infrared. The device appeared also the maximum external quantum efficiency of 72%. The rise and decay times of optical transient response were measured about 19.78 ms and 0.99 ms, respectively. These results suggest that the sulfurization process for large-area 2D heterojunction with MoS2 can be applicable to next-generation electronic and optoelectronic devices.

Thickness Effect on Electro-Optical Characteristics of Mos2/P-Si Heterojunction Devices Fabricated by Aerosol Jet Printing

“…Zhang et al reported that high-quality and large-scale MoS2 films can be obtained by providing controllable deposition of films using the sputtering technique, also MoS2/Si-based devices with high performance can be developed [23]. As far as it can be seen from the literature, there are few studies on the electrical characteristics of MoS2/p-Si heterostructured diodes in which different metal electrodes are developed by vacuum techniques [24,25]. Besides, developing heterostructured devices, it can be considered that these studies aim to reach high-performance devices through the integration of twodimensional materials such as MoS2 with Si-based electronics [26].…”

“…electrical characteristics of MoS2(15 heterostructured diodes in which different metal electrodes are developed by vacuum techniques. Kim et al reached a rectification ratio of 10 4and an ideality factor of 1.53 with a MoS2 (15 nm)/p-Si diode with an ohmic Ti/Au electrode created by vacuum evaporation[25]. Y. Zhang et al reported that the rectifying ratio of the device with MoS2 layer thickness of 10 nm formed by sputtered Ag electrodes was obtained to be 1.05×10 2 with an ideality factor of 1.05.…”