Photoelectric converters with graded-gap layers based on ZnSe

Bobrenko, Yu. N.; Pavelets, S. Yu.; Pavelets, A. M.; Yaroshenko, N. V.

doi:10.1134/s1063782613100047

Cited by 6 publications

(4 citation statements)

References 11 publications

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“…As was shown in works [22,31], when VLs are grown on low-ohmic CdS substrates, donor-type point defects in the cadmium chalcogenide lattice stimulate the formation of corresponding defects in subsequent epitaxial layers. The intergrowth of point defects from the CdS layer through the VLs into the photoactive layer leads to the formation of Zn Cd 1− S solid solution with the electron concentration ≥ ≥ 10 16 cm −3 , which is enough for the effective operation of PECs.…”

Section: Creation Of a Multilayer Heterostructurementioning

confidence: 76%

“…Our researches showed that the application of Zn Cd 1− S solid solutions with the parameter > 0.5 (an elevated content of the Zn component in the SS) gives rise to technological difficulties, which do not exist for the same solid solutions, but with < 0.5. Those difficulties also take place for ZnS and ZnSe [22,31]. They consist in producing a low-ohmic SS film and creating an ohmic contact to it.…”

Section: Creation Of a Multilayer Heterostructurementioning

confidence: 99%

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Ultraviolet Sensors Based on ZnxCd1 – xS Solid Solutions

Pavelets¹,

Bobrenko²,

Semikina³

et al. 2019

Ukr. J. Phys.

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Effective semiconductor ultraviolet sensors on the basis of Zn0.6Cd0.4S and Zn0.7Cd0.3 solid solutions (SSs) are fabricated. The sensors include variband layers and a thin (∼10 nm) stable polycrystalline p-Cu1.8S film as a transparent component of the surface-barrier structure. The n-CdS layers are used as substrates for the epitaxial growing of SSs. The problems of obtaining low-resistive ZnxCd1−xS polycrystalline layers, providing an ohmic contact with them, and matching the lattice parameters in the SS and the substrate material are resolved by applying intermediate variband layers. On the basis of a heterostructure with glass filters, a selective sensor in the UV-A spectral interval is developed, as well as sensors sensitive to the pigmentation interval of solar radiation (the violet-blue section). Energy band diagrams of the multilayer structure are plotted. The results of Auger-spectroscopic researches and the researches of the main electrical and photovoltaic properties of sensors are reported.

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Section: Creation Of a Multilayer Heterostructurementioning

confidence: 76%

Section: Creation Of a Multilayer Heterostructurementioning

confidence: 99%

Ultraviolet Sensors Based on ZnxCd1 – xS Solid Solutions

Pavelets¹,

Bobrenko²,

Semikina³

et al. 2019

Ukr. J. Phys.

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“…New prospects for the development of barrier structures are related to the existence of an effective match with n-type IIVI semiconductors, namely, digenite p-Cu 1.8 S (stable strongly degenerate modification of copper chalcogenide) [10][11][12][13]. The advantages of using p-Cu In this work, we report on fabrication of Cu 1.8 S/CdTe SC (based on polycrystalline n-CdTe) and studying its main properties.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, CdTe was doped with indium in the course of growing to determine the potential of n-CdТе-based SC. Forward recombination-tunnel currents (that are typical for the р-Cu 1.8 S/n-IIVI junctions [11][12][13] …”

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confidence: 99%

Thin-film solar converters based on the p-Cu1.8S/n-CdTe surface-barrier structure

Bobrenko¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. A surface-barrier structure with the transparent p-Cu 1.8 S component was used to make thin-film polycrystalline n-CdTe-based solar converters. Cadmium telluride was grown on CdSe substrates using the quasi-closed volume technique through a graded-gap CdSe x Te 1x interlayer. A multilayer p-Cu 1.8 S/n-CdTe/n-CdSe/Мо structure was prepared. It makes it possible to increase the degree of structural perfection of thin photosensitive n-CdTe layers without application of additional high-temperature treatments, as well as to obtain an ohmic back contact without some additional doping of CdTe. The quantum efficiency spectra and critical parameters of solar converters have been presented. The prospects for application of polycrystalline n-CdTe in solar power engineering have been discussed.

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