Photoelectric memory effect in GaAs

Vincent, Gilbert; Bois, D.; Chantre, A.

doi:10.1063/1.331147

Cited by 307 publications

(81 citation statements)

References 27 publications

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“…Taking into account the existence of this level we propose that in n-GaAs the EL2 thermal recovery takes place via the (EL2*) -state -i.e. the rate of the thermal recovery is not directly dependent on free electron concentration (like in socalled Auger mechanism [2,3]) and the rate equation is as follows:…”

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confidence: 99%

Acceptor-Like Level of the EL2 Defect in its Metastable Configuration

1991

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This paper presents for the first time the evident experimental confirmation that ΕL2 defect, while being in its metastable configuration, traps under hydrostatic pressure an additional electron, i.e. the acceptor-like ( E L 2 * )°/ -l e v e l e n t e r s t h e e n e r g y g a p u n d e r p r e s s u r e . W e p r o p o s e t h a t i n n -G a A s t h e ΕL2 thermal recovery takes always place via the (ΕL2') state.PACS numbers:71.55.Eq, 78.50.GeOur recent experimental results showed that under pressure of p > 0.3 GPa the metastable configuration of the EL2 defect in GaAs became optically sensitive and a very efficient pure optical recovery process was observed [1]. We suggested that these facts could be related to the acceptor-like level of the metastable EL2 -(EL2*)0/ -, entering the gap under pressure. In this work we present the experimental evidence of the above suggestion. We investigated two n-GaAs samples: #5Β with n300Κ = 1.2 x 1016 cm-3, ΝEL2 = 2.7 x 101 6 c m -3 a n d # 1 5 C w i t h n300κ = 3.2 x 10 16 cm-3 , ΝΕL2 = 1.3 x 1016 cm-3. Clear manifestation of the (EL2*)°/ -level was observed in electrical (conductivity and DLTS) measurements.At temperatures Τ < Τ (where Τ -temperature at which EL2 thermally recovers) and sufficiently high pressure (p > 0.3 GPa) during subsequent optical quenching and optical recovery processes strong persistent changes of the electrical conductivity were observed. This was the consequence of the trapping and releasing of the electrons by EL2 optically transferred between its normal (EL20) and This worlds supported by CPBP 01.05 Program of the Polish Ministry of National Education (129)

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Acceptor-Like Level of the EL2 Defect in its Metastable Configuration

1991

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“…For n-type material the recovery temperature can be as low as 45 K. Analysis of the thermally activated rate of recovery yield a barrier of 0.3 eV (Vincent, et al 1982) or 0.36 eV (Trautman, et al 1988). Analysis of the recovery under uniaxial" stress indicate that · the metastable state is trigonally distorted (Csv) from the tetrahedral symmetry of the ground state (Trautman and Baranowski 1992 Historically, metastability in semiconductors has been associated with defect complexes such as interstitial iron-acceptor pairs and the interstitial carbon-substitutional carbon pair in silicon (Watkins 1988).…”

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“…temperatures eliminates the entire sub-bandgap IR absorption due to EL2 , Vincent, et al 1982 (Mitonneau andMicea 1979, Vincent, et al 1982). For n-type material the recovery temperature can be as low as 45 K. Analysis of the thermally activated rate of recovery yield a barrier of 0.3 eV (Vincent, et al 1982) or 0.36 eV (Trautman, et al 1988).…”

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confidence: 99%

Defect studies in low-temperature-grown GaAs

Bliss¹

1992

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“…Appl. 23 (1988) [1][2][3] -under a low-temperature photoexcitation it transforms into a different configuration, EL2 has been extensively studied for the past five years and its properties have been the subject of several recent review papers [4][5][6][7]. As a final result, this metastability which manifests by photoquenching behaviour of photocapacitance [3], photoconductivity [8], electron paramagnetic resonance (EPR) [9], photoluminescence and optical absorption [10,11] has become a kind of specific fingerprint for the presence of EL2.…”

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EL2-related studies in irradiated and implanted GaAs

Guillot

1988

Rev. Phys. Appl. (Paris)

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Résumé. 2014 Le donneur profond EL2 est un défaut très important par le rôle qu'il joue dans la compensation du matériau GaAs semi-isolant non dopé. La Abstract. 2014 The midgap donor level EL2 is a very important defect because of the role it plays in the compensation of undoped semi-insulating GaAs. The knowledge of the exact EL2 structure becomes of even greater prime importance. We present here a review of the experimental results concerning artificial EL2 creation by electron and neutron irradiation and also ion implantation followed or not by annealing. These studies have greatly contributed in specifying the nature of EL2 namely a complex intrinsic defect with an arsenic antisite as a core (AsGa + X). We point out some new concepts such as hopping transitions due to interdefect electron tunnelling which have been tentatively proposed to account for observations in implanted and neutron irradiated samples. We also discuss the main results of these artificial creation experiments as a function of the recent models proposed for EL2 up to the present day.

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Photoelectric memory effect in GaAs

Cited by 307 publications

References 27 publications

Acceptor-Like Level of the EL2 Defect in its Metastable Configuration

Acceptor-Like Level of the EL2 Defect in its Metastable Configuration

Defect studies in low-temperature-grown GaAs

EL2-related studies in irradiated and implanted GaAs

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