Photoelectric properties of GaSe

Adduci, F.; Ferrara, M.; Tantalo, P.; Cingolani, A.; Minafra, A.

doi:10.1002/pssa.2210150134

Cited by 23 publications

(5 citation statements)

References 8 publications

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“…The spectral dependence of the photocurrent agrees with measurements of the DC photoconductivity in semiconductor compounds of A I I I B V I and A I I I 2 B V I 3 groups [9][10][11][12].…”

Section: Resultssupporting

confidence: 81%

Photoelectric properties of single crystals

Abdal-Rahman

Shaikh

1996

J. Phys. D: Appl. Phys.

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Photoelectric properties were measured on a single crystal prepared by a special design based on the Bridgman technique. We report the results of an investigation of the dependence of DC and AC photoconductivity on light intensity, applied voltage and ambient temperature. The forbidden energy gap at room temperature and the thermal coefficient of the energy gap were calculated also and found to be 1.793 eV and respectively.

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“…The spectral dependence of the photocurrent agrees with measurements of the DC photoconductivity in semiconductor compounds of A I I I B V I and A I I I 2 B V I 3 groups [9][10][11][12].…”

Section: Resultssupporting

confidence: 81%

Photoelectric properties of single crystals

Abdal-Rahman

Shaikh

1996

J. Phys. D: Appl. Phys.

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“…For this reason, the crystal structure of InS could be considered as a three-dimensional network somewhat different from the layered structure of its counterparts. The III-VI compounds with these properties recently attracted considerable attention on account of their semiconducting nature and applications in optoelectronic devices, radiation detectors and electrical switching [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Photoelectronic and electrical properties of InS crystals

Qasrawi

Gasanly

2002

Semicond. Sci. Technol.

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To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 ± 2) meV below the conduction band with a density of about 4.8 × 10 11 cm −3 . The conductivity data above 110 K reveal an additional two independent donor levels with activation energies of (50 ± 2) and (164 ± 4) meV indicating the extrinsic nature of conductivity. The spectral distribution of photocurrent in the photon energy range of 0.8-3.1 eV reveals an indirect band gap of (1.91 ± 0.04) eV. The photocurrent-illumination intensity dependence follows the law I ph ∝ F γ , with γ being 1.0 and 0.5 at low and high illumination intensities indicating the domination of monomolecular and bimolecular recombination, respectively. It is observed that the photocurrent increases in the temperature range of 10 K up to T m = 110 K and decreases or remains constant for 110 K < T < 160 K and increases again above 160 K. The temperature dependence of the photocurrent reveals an additional shallow impurity level with activation energies of 3 meV.

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“…In a previous paper (1) we reported experimental evidence of a photovoltaic effect in GaSe due to metal-semiconductor barrier. Moreover, some samples showed also a bulk photovoltage.…”

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confidence: 90%