Photoelectric properties of In/In2Se3 structures

Ільчук, Г. А.; Kus’nézh, V. V.; Petrus, R. Yu.; Rud, V. Yu.; Rud, Yu. V.; Ukrainets, V. O.

doi:10.1134/s1063782607010125

Cited by 3 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For the best Al/n-In 2 Se 3 surface barrier structures, the maximum photovoltaic sensitivity is S U m . 500 V/W at T = 300 K, which is substantially higher than available results [7]. Note that for the Al/n-In 2 Se 3 barriers obtained, we did not observe any signs of degradation phenomena in the photosensitivity under room temperature conditions.…”

contrasting

confidence: 54%

See 1 more Smart Citation

Photoelectric properties of Al/In2Se3 Schottky barriers

Bodnar

Rud

et al. 2008

J Appl Spectrosc

Self Cite

View full text Add to dashboard Cite

We used directional solidification of the melt to grow single crystals of the binary compound In2Se3 and then determined the composition of the crystals obtained and their structure. From Hall effect measurements, we determined the type of conductivity, the concentration, and the Hall mobility of the free electrons in the single crystals obtained, on which we developed photosensitive Al/In 2 Se 3 Schottky barriers for the first time and determined their photoelectric properties. We established that the indicated barriers can be used to design broadband optical photoconverters based on In 2 Se 3 single crystals.

show abstract

contrasting

confidence: 54%

“…1.2 eV from extrapolation of the Fowler dependence η 1/2 → 0 [8,9]. In fact, this dependence, as in [7], proved to be more complicated than expected from the Fowler relation. This fact may be connected with removal of degeneracy and complication of the structure of the valence band in an anisotropic hexagonal In 2 Se 3 crystal.…”

mentioning

confidence: 95%

Photoelectric properties of Al/In2Se3 Schottky barriers

Bodnar

Rud

et al. 2008

J Appl Spectrosc

Self Cite

View full text Add to dashboard Cite

show abstract

“…The II-VI film materials find an application in a wide class of micro and optoelectronic devices, such as photoelectric cells, solar cells, phosphors, and dif ferent sensors [1,2]. In particular, nowadays, proper ties and microstructure of CdS films are in highlight [3,4].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ultrathin impurity source to minimize radiation-induced losses in photosensitive films of CdS

et al. 2015

View full text Add to dashboard Cite

The formation of a lead arachidate film was studied at interfaces of an aqueous solution of lead nitrate with the air and with a solid hydrophilic substrate. The efficiency of lead transfer onto a semiconductor substrate by the horizontal lift method was estimated. Optimal conditions of the fabrication of lead arachidate monolayers with minimum oxygen content were found in order to use these layers as an impurity source for CdS. It was shown that an optimal relationship between the photosensitivity of CdS films and losses induced by accelerated electrons is attained due to the formation of PbS precipitates with the radius of at least 3 nm in a topmost layer with the thickness of about the depth of maximal energy dissipation of the ionizing radiation.

show abstract

Optical properties of In2Se3 thin films

Bodnar

2016

Semiconductors

View full text Add to dashboard Cite

Photoelectric properties of In/In2Se3 structures

Cited by 3 publications

References 3 publications

Photoelectric properties of Al/In2Se3 Schottky barriers

Photoelectric properties of Al/In2Se3 Schottky barriers

Fabrication of ultrathin impurity source to minimize radiation-induced losses in photosensitive films of CdS

Optical properties of In2Se3 thin films

Contact Info

Product

Resources

About