Photoelectrical characterization of a new generation diode having GaFeO3 interlayer

Soylu, M.; Çavaş, Mehmet; Al-Ghamdi, Ahmed A.; Gafer, Zarah H.; El-Tantawy, Farid; Yakuphanoğlu, F.

doi:10.1016/j.solmat.2014.01.045

Cited by 55 publications

(13 citation statements)

References 35 publications

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“…It is seen that photovoltage is only proportional to the incident light power [6,14]. Similar results were reported by Soylu et al [16]. They fabricated p-Si heterojunction based on graphene oxide, and investigated the influence of light intensity on the photodiode parameters.…”

Section: Resultssupporting

confidence: 82%

“…As seen from the Table 2, the values of responsivity for the studied heterojunction based on BTB are higher than that of device reported in the ref. [16]. According to the results of the heterojunction, it can be possible to use the innovative fabrication process for the improvement of the photovoltaic parameters in solar cells, and dye sensitized solar cell devices.…”

Section: Resultsmentioning

confidence: 99%

“…This means that, the resistance is affected by the applied frequency, which is caused by the dependency of the interface states charges on frequency. At low frequencies, these charges can follow the a. c. signal, and an excess capacity can be formed, that is resulted in the high value of resistance [16,17]. …”

Section: Resultsmentioning

confidence: 99%

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Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

İmer

Tombak

Korkut

2016

SDÜ Fen Bil Enst Der

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Abstract:In this study, the photovoltaic device application of bromothymol blue (BTB) as an organic interlayer has been reported. After Al back contact fabrication on the surface of the chemically cleaned substrate by thermal evaporation method, the organic interlayer has been grown on p-Si substrate via spin coating technique. Al top contacts have been formed on this organic thin film to finalize the device constructions. The different illumination intensities were exposed to the prepared sample for the enhancement in the photovoltaic properties of device. The fundamental photovoltaic parameters such as open circuit voltage (Voc), short circuit current (Isc) and output power (P) were determined for the device under different illuminations. The photocurrent and the photo voltage have been increased with the increasing in illumination intensity. The dependence of the capacitance on the voltage at high and low frequency has been also reported for the studied device. Consequently, it has been confirmed that the illumination intensity has an important influence on the photovoltaic parameters of the device. Özet: Bu çalışmada, organik ara yüzey olarak brom timol mavisi (BTB) kullanılarak foto voltaik aygıt uygulaması rapor edilmiştir. Kimyasal olarak temizlenen tabanın mat yüzeyine ısıl buharlaştırma yöntemiyle Al arka kontak oluşturulduktan sonra, dönel kaplama yardımıyla organik ara yüzey tabakası Si taban üzerine kaplanmıştır. Aygıt üretimini tamamlamak için, bu organik ince filmin üzerine Al üst kontaklar oluşturulmuştur. Aygıtın foto voltaik özelliklerini iyileştirmek amacıyla hazırlanan örnek farklı şiddetlerdeki aydınlamaya maruz bırakılmıştır. Farklı aydınlanmalar altında aygıtın açık devre voltajı (Voc), kısa devre akımı (Isc) ve çıkış gücü (P) gibi temel güneş pili parametreleri belirlenmiştir. Aydınlanma şiddetinin artması ile fotoakım ve fotogerilim değerleri artmıştır. Ayrıca, yüksek ve düşük frekans değerlerinde aygıt sığasının voltaj bağımlılığı rapor edilmiştir. Aydınlanma şiddetinin üretilen aygıtın fotovoltaik parametreleri üzerinde önemli bir etkisinin olduğu sonucuna varılmıştır. Spin Kaplama Yöntemiyle Hazırlanan Organik Arayüzeyi

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 99%

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Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

İmer

Tombak

Korkut

2016

SDÜ Fen Bil Enst Der

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“…5b, with a magnitude of *0.83 which indicates a not complete exponentially dependence for the photocurrent and the power of the incident light and then the probability for the presence of trap centers through the band gap. Accordingly, the generation process for the photocurrent in the studied diode can strongly be affected by the located traps and the life times of the photogenerated carriers can be determined by the number of the located traps [33]. Phototransient current characteristics of Cu 2 O/p-Si diodes under different light intensities are shown in Fig.…”

Section: Current-voltage Characterization Of the Cu 2 O/ P-si Diodementioning

confidence: 99%

“…The light illumination dependence of barrier height can be expressed by the following relation [33]:…”

Section: Current-voltage Characterization Of the Cu 2 O/ P-si Diodementioning

confidence: 99%

Nanocrystalline Cu2O/p-Si solar light-responsive Schottky photodiode

et al. 2015

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Nanocrystalline of Cu 2 O thin film was synthesized by sol-gel spin-coating technique. The spectrophotometric characteristics of transmission and reflection were studied for the film deposited on glass substrate. The optical absorption measurements near the absorption edge indicate that the absorption mechanism is due to allowed direct transition with energy gap value of 2.09 eV. The current-voltage characteristics of Al/Cu 2 O/p-Si/Al diode were studied under dark and various light intensities in the range 20-100 mW/cm 2 . The main diode parameters such as barrier height, ideality factor, series resistance were calculated from the analysis of current-voltage characteristics and studied under various illumination intensities. Moreover, the results indicate that the diode has a high photoresponsivity and the photocurrent increases with increasing light intensity which supports the availability of the diode for photosensor applications. The capacitance and conductance characteristics indicate that the diode highly depends on both voltage and frequency. Higher increase in the capacitance under low frequency as well as the presence of a characteristic peak in the capacitancefrequency characteristics indicates the presence of interface states. Moreover, the stronger parameters of the diode performance such as series resistance and interface states were extracted from the capacitance-voltage-frequency and conductance-voltage-frequency characteristics.

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Transient Parameter Extraction Methods

Ocaya

2024

Extraction of Semiconductor Diode Parameters

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Photoelectrical characterization of a new generation diode having GaFeO3 interlayer

Cited by 55 publications

References 35 publications

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

Effect of Illumination on the Photovoltaic Parameters of Al/p-Si Diode with an Organic Interlayer Prepared by Spin Coating Method

Nanocrystalline Cu2O/p-Si solar light-responsive Schottky photodiode

Transient Parameter Extraction Methods

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