Photoelectrical Properties of 1.3μm Emitting InAs Quantum Dots in InGaAs Matrix

Abstract

We present a study of photoelectrical properties of the StranskiKrastanow InAs quantum dots embedded in an InGaAs matrix with low In content, emitting at about 1.3 µm. The ground-state electron-hole transition of the dots was investigated as a function of the temperature in presence of electric fields parallel and perpendicular to the plane of the dots by photocurrent spectroscopy. Microphotoluminescence measurements were also carried out, allowing us to evidence carrier capture from the GaAs matrix into the dots.