Photoelectrochemical and solar cell studies of n-CdSe films grown by repeated electrodeposition cycles

Pandey, Rajeev; Kumar, Sarath Kumar Sathish; Rooz, A J N; Chandra, S. Theodore

doi:10.1016/0040-6090(91)90025-s

Cited by 25 publications

(13 citation statements)

References 8 publications

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“…q is the electron charge, ~ the absorption coefficient, Lp the diffusion length of the minority carriers, e the dielectric constant of the semiconductor, e 0 the permittivity of free space, V the electrode potential, Vr~ the fiat band potential and N D the doping density. By choosing a wavelength of relatively weak absorption so that Lp << 1 and W << 1 (Pandey et al 1991), the following relationship is obtained In order to obtain W, (2) can be rearranged as…”

Section: 3 Results and Discussionmentioning

confidence: 99%

“…The main purpose of carrying out successive pulse plating (pulse deposition repeated after a definite duration of plating preceded by a mild cleaning of the electrode and with a fresh deposition bath for the same duration) is to obtain higher film thicknesses which, in turn will yield higher grain size (Saitoh et al 1976) due to better nucleation sites, yielding higher conversion efficiencies (Lanza and Hovel 1980;Pandey et al 1991) for photoelectrochemical cells.…”

Section: Introductionmentioning

confidence: 99%

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Successively pulse plated cadmium selenide films and their photoelectrochemical behaviour

et al. 1994

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In successive pulse plating,' the pulse deposition is repeated after a definite duration of plating preceded by a mild cleaning of the electrode and with a fresh deposition bath for the same duration. In this study, CdSe films were deposited on Ti substrates by successive .P2ulse plating from a bath containing CdSO 4 and SeO 2 at a current density of 80 mAcm-and a duty cycle of 3.3% for a duration of 30 min. The films heat-treated to 550°C for 20 min in argon atmosphere, were polyctystailine with a hexagonal structure. At an illumination of 60 mW cm-2, a conversion efficiency of 4.5% for the photcetched film and 1.7% for the chemically etched one were determined.

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Section: 3 Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Successively pulse plated cadmium selenide films and their photoelectrochemical behaviour

et al. 1994

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“…A variety of deposition techniques such as electrodeposition (Kutzmutz et al 2001), thermal evaporation (Shreekanthan et al 2003) and chemical bath deposition (Kale and Lokhande 2000) have been used and among these methods electrodeposition is an isothermal process mainly controlled by electrical parameters, which are easily adjusted to control film thickness, morphology, composition, etc. In the literature, most of the CdSe films electrodeposited from aqueous acidic baths usually contain large concentration of elemental selenium (Pandey et al 1991;Gutierrez and Ortega 1989) that weakly crystallizes and the micrographs showed a cauliflower-like appearance, which remained unchanged after annealing. Literature survey shows that extensive work has been done on the preparation and characterization of CdSe thin films electrodeposited from aqueous acidic baths, but very few workers (Baranski and Fawcett 1980;Baranski et al 1983;Skyllas-Kazacos and Miller 1980) deposited these films from non-aqueous baths.…”

Section: Introductionmentioning

confidence: 97%

Photoelectrochemical (PEC) studies on CdSe thin films electrodeposited from non-aqueous bath on different substrates

et al. 2007

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Thin films of CdSe were deposited by potentiostatic mode on different substrates such as stainless steel, titanium and fluorine tin-oxide (FTO) coated glass using non-aqueous bath. The preparative parameters were optimized to get good quality CdSe thin films. These films were characterized by X-ray diffraction (XRD), optical absorption and photoelectrochemical (PEC) techniques. XRD study revealed that the films were polycrystalline in nature with hexagonal phase. Optical absorption study showed that CdSe films were of direct band gap type semiconductor with a band gap energy of 1⋅8 eV. PEC study revealed that CdSe film deposited on FTO coated glass exhibited maximum values of fill factor (FF) and efficiency (η) as compared to the films deposited on stainless steel and titanium substrate.

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“…A number of subsequent studies employed baths similar to that of Panicker for the electrodeposition of CdTe 13,14,15,16 .…”

Section: Introductionmentioning

confidence: 99%

Cadmium zinc telluride (CZT) nanowire sensors for detection of low energy gamma-ray detection

2008

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Bulk single crystals of CdZnTe compound semiconductor is used for room temperature radiation detection in commercial radiation sensors. A large volume of detector material with low defect density is required for increasing the detection efficiency. Manufacture of such a bulky detector-quality material with low defect density is expensive. In this communication, synthesis of nanowires arrays of CdZnTe that can be used for detecting low energy radiation is reported for the first time. CdZnTe ternary compound semiconductor, referred as CZT, was electrodeposited in the form of nanowires onto a TiO 2 nanotubular template in non-aqueous electrolytes using a pulse-reverse process at 130 ºC. Very high electrical resistivity of the CZT nanowires (in the order of 10 10 Ω-cm) was obtained. Such a high resistivity was attributed to the presence of deep defect states such as cadmium vacancies created by the anodic cycle of the pulse-reverse electrodeposition process. Stacks of series connected CZT nanowire arrays were impressed with different bias potentials. The leakage current was in the order of tens of PicoAmperes. When exposed to a radiation source (Am -241, 60 keV), the current flow in the circuit increased. The preliminary results indicate that the CZT nanowire arrays can be used as radiation detector materials at room temperature with a much low bias potential (0.7 -2.3 V) as against 300 -500 V applied to the bulk detector materials.

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Photoelectrochemical and solar cell studies of n-CdSe films grown by repeated electrodeposition cycles

Cited by 25 publications

References 8 publications

Successively pulse plated cadmium selenide films and their photoelectrochemical behaviour

Successively pulse plated cadmium selenide films and their photoelectrochemical behaviour

Photoelectrochemical (PEC) studies on CdSe thin films electrodeposited from non-aqueous bath on different substrates

Cadmium zinc telluride (CZT) nanowire sensors for detection of low energy gamma-ray detection

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