2013
DOI: 10.1021/jp311207x
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Photoelectrochemical Behavior of n-type Si(100) Electrodes Coated with Thin Films of Manganese Oxide Grown by Atomic Layer Deposition

Abstract: Figure S1. XP spectra of the Si 2p region of MnO|Si photoelectrodes with 100 cycles (~10 nm) of MnO (filled circles and blue line) and 25 cycles (~2.5 nm) of MnO (open circles).

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Cited by 136 publications
(141 citation statements)
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“…[ 65,66 ] Moreover, several laboratories, including our own, have recently demonstrated that layers of TiO 2 can stabilize photoelectrodes against corrosion. [67][68][69][70][71][72] To summarize our theoretical fi ndings: There is a thermodynamic driving force for TiO 2 to selectively segregate to the undercoordinated sites, which are most prone to dissolution, due to its favorable surface formation energy. This should lead to an overall stabilization of the surface, since TiO 2 is stable in acid up to more than 2.1 V RHE .…”
Section: Theoretical Calculationsmentioning
confidence: 94%
“…[ 65,66 ] Moreover, several laboratories, including our own, have recently demonstrated that layers of TiO 2 can stabilize photoelectrodes against corrosion. [67][68][69][70][71][72] To summarize our theoretical fi ndings: There is a thermodynamic driving force for TiO 2 to selectively segregate to the undercoordinated sites, which are most prone to dissolution, due to its favorable surface formation energy. This should lead to an overall stabilization of the surface, since TiO 2 is stable in acid up to more than 2.1 V RHE .…”
Section: Theoretical Calculationsmentioning
confidence: 94%
“…Under water oxidation conditions,narrow-band-gap semiconductors are thermodynamically prone to self-oxidation, forming insulating oxides that block the transfer of photogenerated carriers.The photocurrent density of bare n-Si was essentially zero in strong alkaline solutions [22] or dropped to zero quickly during the second scan in neutral electrolytes. [23] Although transparent conductive oxides (TCOs) such as indium tin oxide (ITO) or fluorine-doped tin oxide (FTO) could protect the substrate against corrosion to some extent under neutral or mild pH conditions, [24] limited success with modified TCO has been reported for high pH solutions.…”
Section: Surface Protection For Photoanodesmentioning
confidence: 98%
“…Thus,t he Schottky junction at the semiconductor/solution interface is no longer required, which allowed the surface cocatalysts to be optimized independently.I na ddition, edge [24b] OER catalytic effect of b) NiO x , [32] c) CoO x , [33] and d) MnO [22] with . .…”
Section: Buried Junctions For Higher Photovoltage and Device Flexibilitymentioning
confidence: 99%
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“…Mn [62], Fe [63], Ni [26,[64][65][66][67][68][69][70] and Ir [71], have been used to protect n-Si photoanodes for water oxidation in strongly alkaline or acidic electrolytes [72]. Protection of III-V and II-VI semiconductors in aqueous photoelectrochemical systems has also been studied.…”
Section: Introductionmentioning
confidence: 99%