XOR gate, an important building block in computational
circuits,
is often constructed by combining other basic logic gates, and the
hybridity inevitably leads to its complexity. A photoelectrochemical
device could realize XOR function based on the current change of the
photoelectrode; however, such signal is highly sensitive to photoelectrode
size and therefore requires precise manufacturing at a high cost.
Herein we developed a novel XOR gate based on the light-induced open-circuit
potential (OCP) of the Bi2O3 photoelectrode.
Surprisingly, the OCP of Bi2O3 does not increase
with light intensity according to the traditional logarithmic relationship.
Instead, an unusual decrease in OCP is observed at high light intensity,
which is attributed to the dramatic light-induced increase in surface
states that can be easily regulated by varying the oxygen partial
pressure during reactive magnetron sputtering. Based on such a nonmonotonic
variation of OCP, a facile Bi2O3-based gate
is designed to realize the XOR function. Unlike the commonly used
current signal, OCP is size independent, and therefore, the Bi2O3-based gate does not require high manufacturing
accuracy. Moreover, in addition to XOR, the Bi2O3-based PEC gate also demonstrates great versatility in realizing
other logic functions including AND, OR, NOT, NIH, NAND, and NOR.
The strategy of modulating and applying nonmonotonic OCP signal opens
a new avenue for designing size-independent reconfigurable logic gates
at low manufacturing cost.