2013
DOI: 10.14233/ajchem.2013.14299
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Photoelectrochemical Properties and Its Application of Nano-TiO2/ Boron-doped Diamond Heterojunction Electrode Material

Abstract: Like titanium dioxide (TiO2), boron-doped diamond (BDD) is one of the most popular functional materials in recent years. In this work, TiO2/BDD heterojunction electrodes were prepared by dip-coating TiO2 nanoparticles onto BDD electrodes. XRD patterns of these electrodes suggest that the mixed-phase TiO2/BDD heterojunction electrode with anatase and rutile can be obtained at 700 ºC, named as mixed-phase TiO2/BDD electrode. However, the TiO2/BDD heterojunction electrode prepared at 450 ºC has only anatase phase… Show more

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Cited by 13 publications
(4 citation statements)
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“…When boron (2×10 21 cm -3 )/carbon ((2×10 19 cm -3 ))_ratio in gas phase 1000 ppm and covered 500 nm thick TiO2 layer, this nanostructure of p-n junction was beneficial to the hole injection [210]. The photoelectrocatalytic activity of mixed-phase TiO2/BDD electrode in 700 ºC was 3-fold of that obtained at pure anatase TiO2/BDD electrode in 450 ºC, which was caused by the improvement of the active area [211]. When composite TiO2/BDD electrode was prepared via electrophoretically deposited method, the thickness of TiO2 layer on the BDD surface was 14.68 μm, exhibiting great ability and stability [212].…”
Section: Boron-doped Diamond (Bdd) Anodementioning
confidence: 94%
“…When boron (2×10 21 cm -3 )/carbon ((2×10 19 cm -3 ))_ratio in gas phase 1000 ppm and covered 500 nm thick TiO2 layer, this nanostructure of p-n junction was beneficial to the hole injection [210]. The photoelectrocatalytic activity of mixed-phase TiO2/BDD electrode in 700 ºC was 3-fold of that obtained at pure anatase TiO2/BDD electrode in 450 ºC, which was caused by the improvement of the active area [211]. When composite TiO2/BDD electrode was prepared via electrophoretically deposited method, the thickness of TiO2 layer on the BDD surface was 14.68 μm, exhibiting great ability and stability [212].…”
Section: Boron-doped Diamond (Bdd) Anodementioning
confidence: 94%
“…It is known that TiO 2 exhibits n-type semiconductor properties, which can composite with a p-type semiconductor to form a p-n type heterojunction [18,22]. The electric field integrally formed at the heterojunction interface can effectively separate the photoelectrons/holes in TiO 2 [23][24][25][26]. Therefore, a p-type substrate may be used to form a p-n type heterojunction.…”
Section: Introductionmentioning
confidence: 99%
“…Boron-doped diamond (BDD) is an excellent p-type semiconductor because of its many outstanding properties such as very low background current, wide working potential window, resilient mechanical strength, robust resistance against corrosion, and long term durability and stability [27][28][29][30]. Our group and others have reported the preparation of TiO 2 nanoparticle film/BDD heterojunctions and their application [22,23,25,27,[31][32][33][34]. The combination of one-dimensional vertically aligned TiO 2 nanostructures (e.g.…”
Section: Introductionmentioning
confidence: 99%
“…A variety of nonmetal ions such as N 3,4 , C 5 , S 6 and B 7 has been explored to promote separation of photogenerated charges in TiO 2 . Due to the electron deficiency structure of boron, boron doped TiO 2 has already attracted much attention and researches have increasingly focused on the development of boron doped TiO 2 systems in recent years 8 .…”
Section: Introductionmentioning
confidence: 99%