Photoelectrochemical studies of InGaN/GaN MQW photoanodes

Butson, Joshua D.; Narangari, Parvathala Reddy; Karuturi, Siva Krishna; Yew, Rowena; Lysevych, Mykhaylo; Tan, Hark Hoe; Jagadish, Chennupati

doi:10.1088/1361-6528/aa9eae

Cited by 20 publications

(17 citation statements)

References 41 publications

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“…Reflection losses are often a problem for planar devices, limiting the amount of light that can be absorbed. An effective method for addressing this issue is to pattern or texture the surface of the electrode to make it less reflective, such as by fabricating nanopillars. ,− …”

Section: Resultsmentioning

confidence: 99%

InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting

Butson

Narangari

Lysevych

et al. 2019

ACS Appl. Mater. Interfaces

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While photoelectrochemical (PEC) water splitting is a very promising route toward zero-carbon energy, conversion efficiency remains limited. Semiconductors with narrower band gaps can absorb a much greater portion of the solar spectrum, thereby increasing efficiency. However, narrow band gap (∼1 eV) III−V semiconductor photoelectrodes have not yet been thoroughly investigated. In this study, the narrow band gap quaternary III−V alloy InGaAsP is demonstrated for the first time to have great potential for PEC water splitting, with the long-term goal of developing high-efficiency tandem PEC devices. TiO 2 -coated InGaAsP photocathodes generate a photocurrent density of over 30 mA/cm 2 with an onset potential of 0.45 V versus reversible hydrogen electrode, yielding an applied bias efficiency of over 7%. This is an excellent performance, given that nearly all power losses can be attributed to reflection losses. X-ray photoelectron spectroscopy and photoluminescence spectroscopy show that InGaAsP and TiO 2 form a type-II band alignment, greatly enhancing carrier separation and reducing recombination losses. Beyond water splitting, the tunable band gap of InGaAsP could be of further interest in other areas of photocatalysis, including CO 2 reduction.

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Section: Resultsmentioning

confidence: 99%

InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting

Butson

Narangari

Lysevych

et al. 2019

ACS Appl. Mater. Interfaces

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“…For example, GaN nanorod arrays, GaN nanopillars, GaN nanowall network and InGaN/ GaN MQW nanopillar with sevenfold, twofold, 17% and fourfold increase in photocurrent density compared to their planar counterparts have been reported, respectively. [43][44][45] Thanks to additional higher surface area, the photocurrent density of Si/ InGaN hierarchical nanowire arrays is five times higher than that of InGaN nanowire arrays grown on planar Si. [46] In addition to the advantage of 1D nanostructure, the following intrinsic properties enable InGaN nanowires to be a promising candidate for PEC water splitting: i) The bandgap of InGaN can be tuned from 3.4 to 0.65 eV by varying the content of In (In x Ga 1−x ), and the corresponding VB is positive than water oxidation potential ( Figure 2).…”

Section: Ingan Nanowires Photoelectrodesmentioning

confidence: 99%

Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting

Lin

Wang

2020

Adv Funct Materials

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Photoelectrochemical (PEC) water splitting provides a promising approach to convert solar energy into hydrogen. Developing active, stable, and cost-effective semiconductors photoelectrodes is of great significance for achieving high-efficiency and large-scale hydrogen production. InGaN nanowires as an important candidate have gained a great upsurge in solar water splitting due to its tunable gap, high electron mobility, large active area, and excellent chemical stability. To obtain state-of-the-art InGaN nanowires-based photoelectrodes, tremendous efforts have been devoted to enhance light absorption capacity, charge carrier dynamics, and redox activity. In this review, recent advances in InGaN nanowires as photoelectrodes for PEC water splitting are comprehensively presented, with a focus on photoelectrode optimization strategies from the aspects of surface and interface structure modulation including doping engineering, energy band engineering, heterostructure engineering, and micro-nano engineering. The representative applications of InGaN nanowires-based PEC tandem cell are also discussed. Finally, perspectives on remaining challenges and future development are outlined.

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“…Among them, 1D NWs attracted great attention due to their excellent crystallinity, light trapping ability, direct charge transport paths, high surface to volume ratio. In particular, compound III–V semiconductor NWs, including InGa x N 1− x alloys, InP, GaP, and GaAs have been widely investigated for PEC applications.…”

Section: Nanowires For Solar Water Splittingmentioning

confidence: 99%

“…The deposition of the cocatalyst on the NW surface significantly reduced self‐oxidation of GaN photoanode by swiftly extracting the photogenerated carriers to participate in water oxidation reaction. We further engineered the bandgap of GaN by incorporating InGaN/GaN multiple quantum wells (MQWs) toward improving the PEC performance . The introduction of InGaN/GaN MQWs into GaN extended the optical absorption of NWs into the visible region of the solar spectrum, thereby contributing to a substantial improvement in photocurrent density for InGaN/GaN MQW nanopillars …”

Section: Nanowires For Solar Water Splittingmentioning

confidence: 99%

Engineering III–V Semiconductor Nanowires for Device Applications

Wong‐Leung

Yang

et al. 2019

Advanced Materials

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of silicon along the direction. Hiruma et al. [4] demonstrated that GaAs NWs-then termed whisker growth can be grown by metal-organic chemical vapor deposition (MOCVD) with a similar VLS mechanism. A spate of papers from the same group clearly identified that this process could be extended to InAs NWs and the group was successful in growing a GaAs p-n junction (see ref.[5] for a review). This concept was further expanded in NW heterostructures by Samuelson and co-workers in Lund. [6] This whole sequence of research findings triggered the growing new research field of semiconductor NWs which peaked in 2009 with a vast number of publications. Figure 1 is a plot of the number of publications published per year in the field of "semiconductor nanowires" for over two decades from Clarivate Analytics. Since 2009, the number of publications within this field is about 1000 per year. Herein, we review our recent NW work and expand on our future directions within this field. III-V semiconductor nanowires offer potential new device applicationsbecause of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.

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Photoelectrochemical studies of InGaN/GaN MQW photoanodes

Cited by 20 publications

References 41 publications

InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting

InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting

Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting

Engineering III–V Semiconductor Nanowires for Device Applications

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