Photoelectrochemical study of TiS3 in aqueous solution

Gorochov, O.; Katty, A.; Nagard, N. Le; Lévy‐Clément, C.; Schleich, D. M.

doi:10.1016/0025-5408(83)90178-2

Cited by 33 publications

(19 citation statements)

References 8 publications

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“…Equally, this explains why when moving from the left-hand side of the periodic table the disulfides form layered structures with fully reduced S 2− anions (TiS 2 , NbS 2 ), while the formation of persulfide type S–S bonds is encountered only on the right-hand side of the periodic table (e.g., marcasite/pyrite type Fe 2+ S 2 , Co 2+ S 2 , and Ni 2+ S 2 ) 17 , 18 . Ultimately, the persulfide TiS 3 shows two types of oxidation states for the sulfur (S 2− and (S 2 ) 2− ) 19 , 20 , which suggests that anionic redox can be activated in materials with d 0 metals. These mechanisms of hole stabilization constitute a rich playground for the synthesis of materials with reversible anionic redox chemistry 21 .…”

Section: Introductionmentioning

confidence: 99%

Activation of anionic redox in d0 transition metal chalcogenides by anion doping

et al. 2021

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Expanding the chemical space for designing novel anionic redox materials from oxides to sulfides has enabled to better apprehend fundamental aspects dealing with cationic-anionic relative band positioning. Pursuing with chalcogenides, but deviating from cationic substitution, we here present another twist to our band positioning strategy that relies on mixed ligands with the synthesis of the Li2TiS3-xSex solid solution series. Through the series the electrochemical activity displays a bell shape variation that peaks at 260 mAh/g for the composition x = 0.6 with barely no capacity for the x = 0 and x = 3 end members. We show that this capacity results from cumulated anionic (Se2−/Sen−) and (S2−/Sn−) and cationic Ti3+/Ti4+ redox processes and provide evidence for a metal-ligand charge transfer by temperature-driven electron localization. Moreover, DFT calculations reveal that an anionic redox process cannot take place without the dynamic involvement of the transition metal electronic states. These insights can guide the rational synthesis of other Li-rich chalcogenides that are of interest for the development of solid-state batteries.

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Section: Introductionmentioning

confidence: 99%

Activation of anionic redox in d0 transition metal chalcogenides by anion doping

et al. 2021

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“…Furthermore, these MS 3 offer adequate optical properties, in particular, their calculated energy band gaps are

1.0 eV thinmathspace({TiS}_{3} thinmathspace),

1.8 - 2.0 eV thinmathspace({ZrS}_{3} thinmathspace)

and

2.0 eV thinmathspace({HfS}_{3} thinmathspace)

. However, their photoelectrochemical properties have been scarcely investigated . Recently, TiS 3 has appeared as an option for hydrogen generation under visible light and ZrS 3 as efficient catalyst for water oxidation .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of a family of layered trichalcogenides for assisted hydrogen photogeneration

Flores

Ares

Ferrer

et al. 2016

Physica Rapid Research Ltrs

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Three layered trisulfides (TiS3, ZrS3, HfS3) have been synthesized by solid–gas reaction between metal and sulfur in a vacuum sealed ampoule at 550 °C during 60 h. The samples used in this work were prepared from a colloidal suspension of powder of each one of the metal trisulfides (MS3, M = Ti, Zr, Hf) in ethanol and deposited on titanium disks and quartz substrates by ”drop coating” technique. These samples have been characterized by X‐ray diffraction, energy dispersive analysis of X‐ray and scanning electron microscopy. The obtained direct optical band gaps are 1.0 ± 0.1 eV, 2.0 ± 0.1 eV and 2.2 ± 0.1 eV for TiS3, ZrS3 and HfS3, respectively. Photoelectrochemical measurements in 0.5 M Na2SO3 have been carried out to characterize the MS3/electrolyte interface. The flat‐band potentials (Vfb) vs. Ag/AgCl measured by electrochemical impedance spectroscopy (EIS) are –0.84 ± 0.02 V (TiS3), –0.93 ± 0.02 V (ZrS3) and –0.92 ± 0.02 V (HfS3). Hydrogen generation was investigated in a photoelectrochemical cell (PEC) with MS3 as photoanodes under white light illumination of 200 ± 20 mW/cm2 at external bias potentials of 0.3 V vs. Ag/AgCl. Hydrogen evolution flows have been quantified by quadrupole mass spectrometry (QMS) reaching instantaneous values up to 19 ± 2 nmol H2/min cm2 with TiS3 as photoanode.

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“…The VS mechanism of crystal growth was already purposed and demonstrated by Burton et al 134 . Other authors 68,69 have 6 also suggested this mechanism in the synthesis of TiS3 but without evidence about the existence of any gaseous species.…”

mentioning

confidence: 99%

“…Also during the 70s, it was shown that, like TMDCs, TMTCs can undergo a topotactic reaction with lithium making them viable materials as electrodes in lithium batteries. [62][63][64] There has been continued research in this direction 65,66 and more recent applications of TMTCs include their use as precursors in the synthesis of twodimensional (2D) materials (metal dichalcogenides and trioxides) 67,68 , anodes in photoelectrochemical cells [69][70][71] , photoelectrodes for hydrogen photoassisted generation 72,73 , UV-visible photodetectors 53,[74][75][76] and lastly, in thermoelectric devices 77,78 . In this review we discuss the unique properties of the group IV-V trichalcogenides and their use for applications in electronic devices and photodetection.…”

Section: Introductionmentioning

confidence: 99%

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

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The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

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Photoelectrochemical study of TiS3 in aqueous solution

Cited by 33 publications

References 8 publications

Activation of anionic redox in d0 transition metal chalcogenides by anion doping

Activation of anionic redox in d0 transition metal chalcogenides by anion doping

Synthesis and characterization of a family of layered trichalcogenides for assisted hydrogen photogeneration

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

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