Photoelectrochemical water splitting with 600 keV N2+ ion irradiated BiVO4 and BiVO4/Au photoanodes

Srivastav, Anupam; Verma, Anuradha; Khan, Saif; Smith, York R.; Satsangi, Vibha R.; Shrivastav, Rohit; Banerjee, Anamika

doi:10.1016/j.ijhydene.2019.03.211

Cited by 11 publications

(6 citation statements)

References 42 publications

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“…85,86 Semiconductors are eminently attractive electrode materials for solar-driven PEC water splitting. 34,87,88 To better improve photo-redox reactions, these semiconductors must have a rational bandgap for being activated (i.e., photoexcitation) by light absorption. 89,90 Many types of semiconductors such as TiO 2 , a-Fe 2 O 3 , and BiVO 4 , etc.…”

Section: Application Of the Ion-irradiation Technique For Photoelectr...mentioning

confidence: 99%

“…centers for photogenerated charge carriers, resulting in the decrease of the photocurrent. Srivastav et al 88 investigated the effect of N + ion-irradiation on plasmonic Au nanoparticle loaded BiVO 4 photoelectrodes for PEC water splitting. At an irradiated 2 Â 10 15 ions per cm 2 fluence, the BiVO 4 /Au photoanode shows a photocurrent density of 2.54 mA cm À2 (an increase of approximately 92% in the photocurrent density) higher than the pristine BiVO 4 .…”

Section: Materials Advances Reviewmentioning

confidence: 99%

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Ion-irradiation of catalyst and electrode materials for water electrolysis/photoelectrolysis cells, rechargeable batteries, and supercapacitors

et al. 2022

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Section: Application Of the Ion-irradiation Technique For Photoelectr...mentioning

confidence: 99%

Section: Materials Advances Reviewmentioning

confidence: 99%

Ion-irradiation of catalyst and electrode materials for water electrolysis/photoelectrolysis cells, rechargeable batteries, and supercapacitors

et al. 2022

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“…To further investigate the effect of bulk oxygen vacancy on the properties of BiVO 4 , we choose ion irradiation technology to introduce bulk V o inside BiVO 4 . Ion beam technology can efficiently realize material modification. − He + ions, as a light element, causes less lattice damage to BiVO 4 nanofilms than other elements. In addition, as an inert element, the He + ion does not react with BiVO 4 when introducing V o .…”

Section: Introductionmentioning

confidence: 99%

Improving PEC Performance of BiVO₄ by Introducing Bulk Oxygen Vacancies by He⁺ Ion Irradiation

Duan

Zhong

et al. 2022

J. Phys. Chem. C

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Bismuth vanadate is a promising semiconductor in photoelectrochemical (PEC) water oxidation due to its suitable band gap (∼2.4 eV) for absorption of solar spectrum. Nevertheless, low charge mobility and poor photogenerated carrier separation efficiency of BiVO 4 lead to unsatisfactory photocurrent densities and poor PEC performance. Here, we report an innovative method of introducing bulk oxygen vacancies into BiVO 4 film through helium ion irradiation to improve the transfer and separation efficiency by improving the bulk conductivity. The result indicates that the highest photocurrent density of the ion-irradiated BiVO 4 reaches 1.33 mA cm −2 at 1.2 V vs RHE, which is about 70% higher than that of the un-irradiated one (∼0.77 mA cm −2 ). The corresponding highest IPCE reaches 40% around 400 nm, which is double compared with that of the un-irradiated BiVO 4 . Therefore, ion irradiation is an effective and precise method to improve the photoelectrochemical performance by inducing bulk oxygen vacancies into BiVO 4 . It can also be extended to other photoelectrode materials.

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“…1−3 However, the photocurrent of BiVO 4 is limited to well below its theoretical maximum value by the slow carrier mobility in the bulk. 4−7 Thus far, extensive efforts and time have been invested to promote the photogenerated charge separation and transfer of BiVO 4 , including facet engineering, 8−10 heterojunction engineering, 11−13 metal deposition, 14,15 modification with electrolytes, 16,17 and doping. 18−20 In particular, heteroelement doping can regulate the electronic structure and atomic arrangement of BiVO 4 .…”

Section: Introductionmentioning

confidence: 99%

“…Thus far, extensive efforts and time have been invested to promote the photogenerated charge separation and transfer of BiVO 4 , including facet engineering, − heterojunction engineering, − metal deposition, , modification with electrolytes, , and doping. − In particular, heteroelement doping can regulate the electronic structure and atomic arrangement of BiVO 4 . A typical example is that a gradient concentration of tungsten was introduced in the BiVO 4 film, which created a distributed homojunction.…”

Section: Introductionmentioning

confidence: 99%

Boosting Photoelectrochemical Performance of BiVO₄ through Photoassisted Self-Reduction

Yin

et al. 2020

ACS Appl. Energy Mater.

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The photoelectrochemical water splitting of monoclinic bismuth vanadate (BiVO4) suffers from sluggish charge mobility as well as substantial charge recombination losses. Here, we treated the BiVO4 by using a photoassisted self-reduction method based on the fact that the self-reduction potential of BiVO4 is more positive than its conduction band. The BiVO4 photoanode subjected to this treatment has a more negative onset potential and higher photovoltage compared with bare BiVO4. Moreover, its charge carrier density and mobility are increased and accelerated compared to bare BiVO4. As a result, the charge separation efficiency reaches to approximate 94% at 1.23 V vs the reversible hydrogen electrode (RHE), and the photocurrent densities are 3.18 and 5.84 mA/cm2 (at 1.23 V vs RHE) in the absence and presence of the sacrificial agent, respectively. In particular, the reduced BiVO4 with electrocatalysts (FeOOH/NiOOH) achieves a photocurrent of 5.06 mA/cm2 at 1.23 V vs RHE, which is 2.54 times higher than that of the bare BiVO4. This approach provides a new strategy for designing a semiconductor-based photoanode with superior performance for photoelectrochemical water splitting.

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Photoelectrochemical water splitting with 600 keV N2+ ion irradiated BiVO4 and BiVO4/Au photoanodes

Cited by 11 publications

References 42 publications

Ion-irradiation of catalyst and electrode materials for water electrolysis/photoelectrolysis cells, rechargeable batteries, and supercapacitors

Ion-irradiation of catalyst and electrode materials for water electrolysis/photoelectrolysis cells, rechargeable batteries, and supercapacitors

Improving PEC Performance of BiVO₄ by Introducing Bulk Oxygen Vacancies by He⁺ Ion Irradiation

Boosting Photoelectrochemical Performance of BiVO₄ through Photoassisted Self-Reduction

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Photoelectrochemical water splitting with 600 keV N2+ ion irradiated BiVO4 and BiVO4/Au photoanodes

Cited by 11 publications

References 42 publications

Ion-irradiation of catalyst and electrode materials for water electrolysis/photoelectrolysis cells, rechargeable batteries, and supercapacitors

Ion-irradiation of catalyst and electrode materials for water electrolysis/photoelectrolysis cells, rechargeable batteries, and supercapacitors

Improving PEC Performance of BiVO4 by Introducing Bulk Oxygen Vacancies by He+ Ion Irradiation

Boosting Photoelectrochemical Performance of BiVO4 through Photoassisted Self-Reduction

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Product

Resources

About

Improving PEC Performance of BiVO₄ by Introducing Bulk Oxygen Vacancies by He⁺ Ion Irradiation

Boosting Photoelectrochemical Performance of BiVO₄ through Photoassisted Self-Reduction